Issued Patents All Time
Showing 26–50 of 84 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9059209 | Replacement gate ETSOI with sharp junction | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2015-06-16 |
| 9059243 | Shallow trench isolation structures | Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Arvind Kumar +1 more | 2015-06-16 |
| 9024389 | Borderless contact for ultra-thin body devices | Su Chen Fan, David V. Horak | 2015-05-05 |
| 8999774 | Bulk fin-field effect transistors with well defined isolation | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-04-07 |
| 9000522 | FinFET with dielectric isolation by silicon-on-nothing and method of fabrication | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-04-07 |
| 8993382 | Bulk fin-field effect transistors with well defined isolation | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-03-31 |
| 8987790 | Fin isolation in multi-gate field effect transistors | Kangguo Cheng, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-03-24 |
| 8987837 | Stress enhanced finFET devices | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-03-24 |
| 8987070 | SOI device with embedded liner in box layer to limit STI recess | Kangguo Cheng, Shom Ponoth | 2015-03-24 |
| 8946792 | Dummy fin formation by gas cluster ion beam | Kangguo Cheng, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-02-03 |
| 8932918 | FinFET with self-aligned punchthrough stopper | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-01-13 |
| 8928090 | Self-aligned contact structure for replacement metal gate | Soon-Cheon Seo, Alexander Reznicek | 2015-01-06 |
| 8928067 | Bulk fin-field effect transistors with well defined isolation | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-01-06 |
| 8927387 | Robust isolation for thin-box ETSOI MOSFETS | Kangguo Cheng, Bruce B. Doris, Sanjay C. Mehta, Stefan Schmitz | 2015-01-06 |
| 8889564 | Suspended nanowire structure | Kangguo Cheng, James J. Demarest | 2014-11-18 |
| 8859379 | Stress enhanced finFET devices | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2014-10-14 |
| 8836031 | Electrical isolation structures for ultra-thin semiconductor-on-insulator devices | David V. Horak, Charles W. Koburger, III, Shom Ponoth | 2014-09-16 |
| 8829617 | Uniform finFET gate height | Sanjay C. Mehta, Shom Ponoth, Ravikumar Ramachandran, Stefan Schmitz, Theodorus E. Standaert | 2014-09-09 |
| 8828828 | MOSFET including asymmetric source and drain regions | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2014-09-09 |
| 8815694 | Inducing channel stress in semiconductor-on-insulator devices by base substrate oxidation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kerber | 2014-08-26 |
| 8796128 | Dual metal fill and dual threshold voltage for replacement gate metal devices | Lisa F. Edge, Nathaniel Berliner, James J. Demarest, Raymond J. Donohue | 2014-08-05 |
| 8790991 | Method and structure for shallow trench isolation to mitigate active shorts | Jason E. Cummings, Hemanth Jagannathan, Sanjay C. Mehta | 2014-07-29 |
| 8772874 | MOSFET including asymmetric source and drain regions | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2014-07-08 |
| 8703553 | MOS capacitors with a finFET process | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2014-04-22 |
| 8679941 | Method to improve wet etch budget in FEOL integration | Jason E. Cummings, Lisa F. Edge, David V. Horak, Hemanth Jagannathan, Sanjay C. Mehta | 2014-03-25 |