BH

Balasubramanian S. Haran

IBM: 65 patents #1,172 of 70,183Top 2%
Globalfoundries: 18 patents #182 of 4,424Top 5%
GU Globalfoundries U.S.: 1 patents #22 of 211Top 15%
📍 Watervliet, NY: #4 of 109 inventorsTop 4%
🗺 New York: #781 of 115,490 inventorsTop 1%
Overall (All Time): #20,700 of 4,157,543Top 1%
84
Patents All Time

Issued Patents All Time

Showing 51–75 of 84 patents

Patent #TitleCo-InventorsDate
8673738 Shallow trench isolation structures Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz, Pranita Kulkarni, Arvind Kumar +1 more 2014-03-18
8673708 Replacement gate ETSOI with sharp junction Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz 2014-03-18
8664050 Structure and method to improve ETSOI MOSFETS with back gate Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni 2014-03-04
8642415 Semiconductor substrate with transistors having different threshold voltages Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Alexander Reznicek 2014-02-04
8633085 Dual-depth self-aligned isolation structure for a back gate electrode Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi 2014-01-21
8629008 Electrical isolation structures for ultra-thin semiconductor-on-insulator devices David V. Horak, Charles W. Koburger, III, Shom Ponoth 2014-01-14
8629007 Method of improving replacement metal gate fill James J. Demarest 2014-01-14
8623712 Bulk fin-field effect transistors with well defined isolation Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita 2014-01-07
8623730 Method for fabricating silicon-on-insulator transistor with self-aligned borderless source/drain contacts Susan S. Fan, David V. Horak, Charles W. Koburger, III 2014-01-07
8617961 Post-gate isolation area formation for fin field effect transistor device Sanjay C. Mehta, Theodorus E. Standaert 2013-12-31
8614486 Low resistance source and drain extensions for ETSOI Hemanth Jagannathan, Sivananda K. Kanakasabapathy, Sanjay C. Mehta 2013-12-24
8604539 Bulk fin-field effect transistors with well defined isolation Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita 2013-12-10
8598663 Semiconductor structure having NFET and PFET formed in SOI substrate with underlapped extensions Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni, Ghavam G. Shahidi 2013-12-03
8592290 Cut-very-last dual-EPI flow Veeraraghavan S. Basker, Huiming Bu, Kangguo Cheng, Nicolas Loubet, Shom Ponoth +3 more 2013-11-26
8592263 FinFET diode with increased junction area Theodorus E. Standaert, Kangguo Cheng, Shom Ponoth, Tenko Yamashita 2013-11-26
8581320 MOS capacitors with a finfet process Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita 2013-11-12
8569152 Cut-very-last dual-epi flow Veeraraghavan S. Basker, Huiming Bu, Kangguo Cheng, Nicolas Loubet, Shom Ponoth +3 more 2013-10-29
8569125 FinFET with improved gate planarity Theodorus E. Standaert, Kangguo Cheng, Shom Ponoth, Soon-Cheon Seo, Tenko Yamashita 2013-10-29
8551872 Low series resistance transistor structure on silicon on insulator layer Kangguo Chen, Bruce B. Doris, Amlan Majumdar, Sanjay C. Mehta 2013-10-08
8486778 Low resistance source and drain extensions for ETSOI Hemanth Jagannathan, Sivananda K. Kanakasabapathy, Sanjay C. Mehta 2013-07-16
8455932 Local interconnect structure self-aligned to gate structure Ali Khakifirooz, Kangguo Cheng, Bruce B. Doris, Wilfried E. Haensch, Pranita Kulkarni 2013-06-04
8440552 Method to form low series resistance transistor devices on silicon on insulator layer Kangguo Chen, Bruce B. Doris, Amlan Majumdar, Sanjay C. Mehta 2013-05-14
8435846 Semiconductor devices with raised extensions Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Pranita Kulkarni 2013-05-07
8432002 Method and structure for low resistive source and drain regions in a replacement metal gate process flow Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita 2013-04-30
8420459 Bulk fin-field effect transistors with well defined isolation Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita 2013-04-16