Issued Patents All Time
Showing 551–575 of 1,279 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10224403 | Thin-base high frequency lateral bipolar junction transistor | Karthik Balakrishnan, Bahman Hekmatshoartabari, Jeng-Bang Yau | 2019-03-05 |
| 10224281 | Metallic blocking layer for reliable interconnects and contacts | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2019-03-05 |
| 10217818 | Method of formation of germanium nanowires on bulk substrates | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2019-02-26 |
| 10211341 | Tensile strained high percentage silicon germanium alloy FinFETS | Bruce B. Doris, Pouya Hashemi, Joshua M. Rubin, Robin M. Schulz | 2019-02-19 |
| 10211320 | Fin cut without residual fin defects | Kangguo Cheng, Pouya Hashemi, Dominic J. Schepis | 2019-02-19 |
| 10211095 | High performance middle of line interconnects | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2019-02-19 |
| 10204837 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Qiqing C. Ouyang, Dominic J. Schepis | 2019-02-12 |
| 10199220 | Semiconductor structure having insulator pillars and semiconductor material on substrate | Dominic J. Schepis, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi | 2019-02-05 |
| 10192888 | Metallized junction FinFET structures | Bruce B. Doris, Pranita Kerber, Joshua M. Rubin | 2019-01-29 |
| 10177235 | Nano-sheet transistors with different threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2019-01-08 |
| 10177169 | Semiconductor device structure with 110-PFET and 111-NFET current flow direction | Pouya Hashemi, Ali Khakifirooz, Shogo Mochizuki | 2019-01-08 |
| 10177168 | Fin field-effect transistor having an oxide layer under one or more of the plurality of fins | Kangguo Cheng, Pouya Hashemi, Dominic J. Schepis | 2019-01-08 |
| 10176990 | SiGe FinFET with improved junction doping control | Pranita Kerber, Qiqing C. Ouyang | 2019-01-08 |
| 10175192 | Superhydrophobic electrode and biosensing device using the same | Ali Afzali-Ardakani, Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari | 2019-01-08 |
| 10170660 | Digital alloy germanium heterojunction solar cell | Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari | 2019-01-01 |
| 10170638 | Nanosheet substrate isolated source/drain epitaxy by dual bottom spacer | — | 2019-01-01 |
| 10170637 | Perfectly symmetric gate-all-around FET on suspended nanowire | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2019-01-01 |
| 10170620 | Substantially defect free relaxed heterogeneous semiconductor fins on bulk substrates | Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki | 2019-01-01 |
| 10170619 | Vertical schottky contact FET | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2019-01-01 |
| 10170587 | Heterogeneous source drain region and extension region | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2019-01-01 |
| 10170577 | Vertical transport FETs having a gradient threshold voltage | Choonghyun Lee, Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2019-01-01 |
| 10170575 | Vertical transistors with buried metal silicide bottom contact | Kangguo Cheng, Tak H. Ning | 2019-01-01 |
| 10170550 | Stressed nanowire stack for field effect transistor | Martin M. Frank, Pouya Hashemi, Ali Khakifirooz | 2019-01-01 |
| 10170537 | Capacitor structure compatible with nanowire CMOS | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2019-01-01 |
| 10170499 | FinFET device with abrupt junctions | Kangguo Cheng, Hong He, Ali Khakifirooz, Soon-Cheon Seo | 2019-01-01 |