Issued Patents All Time
Showing 26–50 of 62 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11062951 | Method of manufacturing of a field effect transistor having a junction aligned with spacers | — | 2021-07-13 |
| 11049933 | Creation of stress in the channel of a nanosheet transistor | Nicolas Loubet, Tenko Yamashita, Guillaume Audoit, Nicolas Bernier, Remi Coquand | 2021-06-29 |
| 10950491 | Method for transferring a useful layer | Didier Landru, Nadia Ben Mohamed, Oleg Kononchuk, Frédéric Mazen, Damien Massy +1 more | 2021-03-16 |
| 10896956 | Field effect transistor with reduced contact resistance | Remi Coquand | 2021-01-19 |
| 10879083 | Method for modifying the strain state of a block of a semiconducting material | Sylvain Maitrejean, Romain Wacquez | 2020-12-29 |
| 10818775 | Method for fabricating a field-effect transistor | Emmanuel Augendre, Remi Coquand, Nicolas Loubet | 2020-10-27 |
| 10727320 | Method of manufacturing at least one field effect transistor having epitaxially grown electrodes | Emmanuel Augendre, Remi Coquand, Nicolas Loubet | 2020-07-28 |
| 10714392 | Optimizing junctions of gate all around structures with channel pull back | Nicolas Loubet, Emmanuel Augendre, Remi Coquand | 2020-07-14 |
| 10600786 | Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor | Sylvain Maitrejean, Emmanuel Augendre, Pierre Morin | 2020-03-24 |
| 10553723 | Method for forming doped extension regions in a structure having superimposed nanowires | Remi Coquand, Nicolas Loubet, Robin Hsin Kuo Chao | 2020-02-04 |
| 10431683 | Method for making a semiconductor device with a compressive stressed channel | Emmanuel Augendre, Remi Coquand, Nicolas Loubet | 2019-10-01 |
| 10347721 | Method to increase strain in a semiconductor region for forming a channel of the transistor | Laurent Grenouillet, Raluca Tiron | 2019-07-09 |
| 10269930 | Method for producing a semiconductor device with self-aligned internal spacers | Emmanuel Augendre, Remi Coquand | 2019-04-23 |
| 10263077 | Method of fabricating a FET transistor having a strained channel | Remi Coquand | 2019-04-16 |
| 10256102 | Method for fabricating a field effect transistor having a surrounding grid | Remi Coquand, Emmanuel Augendre | 2019-04-09 |
| 10217849 | Method for making a semiconductor device with nanowire and aligned external and internal spacers | Sylvain Barraud, Emmanuel Augendre, Remi Coquand | 2019-02-26 |
| 10217842 | Method for making a semiconductor device with self-aligned inner spacers | Emmanuel Augendre, Remi Coquand | 2019-02-26 |
| 10205021 | Method of fabrication of a semiconductor substrate having at least a tensilely strained semiconductor portion | — | 2019-02-12 |
| 10170621 | Method of making a transistor having a source and a drain obtained by recrystallization of semiconductor | Perrine Batude, Flavia PIEGAS LUCE | 2019-01-01 |
| 10147818 | Enhanced method of stressing a transistor channel zone | Benoit Mathieu | 2018-12-04 |
| 10147788 | Process for fabricating a field effect transistor having a coating gate | Emmanuel Augendre, Remi Coquand | 2018-12-04 |
| 10141424 | Method of producing a channel structure formed from a plurality of strained semiconductor bars | Remi Coquand, Emmanuel Augendre, Nicolas Loubet | 2018-11-27 |
| 10134875 | Method for fabricating a transistor having a vertical channel having nano layers | Emmanuel Augendre, Remi Coquand | 2018-11-20 |
| 10115590 | Manufacturing of silicon strained in tension on insulator by amorphisation then recrystallisation | Aurore Bonneviaille | 2018-10-30 |
| 10109735 | Process for fabricating a field effect transistor having a coating gate | Remi Coquand, Emmanuel Augendre | 2018-10-23 |