Issued Patents All Time
Showing 51–75 of 81 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10043870 | Method and structure to improve film stack with sensitive and reactive layers | Xinyu BAO, Errol Antonio C. Sanchez, David K. Carlson, Keun-Yong Ban | 2018-08-07 |
| 10043666 | Method for inter-chamber process | Xinyu BAO, Errol Antonio C. Sanchez, Keun-Yong Ban | 2018-08-07 |
| 9925569 | Chamber cleaning with infrared absorption gas | — | 2018-03-27 |
| 9923081 | Selective process for source and drain formation | Xinyu BAO, Flora Fong-Song CHANG, Abhishek Dube, Xuebin Li, Errol Antonio C. Sanchez +2 more | 2018-03-20 |
| 9890455 | Pre-heat ring designs to increase deposition uniformity and substrate throughput | Nyi O. Myo, John S. Webb, Masato Ishii, Xuebin Li, Ali Zojaji | 2018-02-13 |
| 9845550 | Upper dome with injection assembly | Paul Brillhart, Anzhong Chang, Edric Tong, Kin Pong Lo, James Francis Mack +5 more | 2017-12-19 |
| 9799737 | Method for forming group III/V conformal layers on silicon substrates | Xinyu BAO, Errol Antonio C. Sanchez, David K. Carlson | 2017-10-24 |
| 9752224 | Structure for relaxed SiGe buffers including method and apparatus for forming | Errol Antonio C. Sanchez, Keun-Yong Ban, Xinyu BAO | 2017-09-05 |
| 9650726 | Methods and apparatus for deposition processes | Nyi O. Myo, Kevin Joseph Bautista, Schubert S. Chu, Yihwan Kim | 2017-05-16 |
| 9530888 | MOCVD growth of highly mismatched III-V CMOS channel materials on silicon substrates | Keun-Yong Ban, Errol Antonio C. Sanchez, Xinyu BAO, David K. Carlson | 2016-12-27 |
| 9460918 | Epitaxy of high tensile silicon alloy for tensile strain applications | Xuebin Li, Saurabh Chopra, Yihwan Kim | 2016-10-04 |
| 9200367 | Method and apparatus for gas delivery | Yihwan Kim | 2015-12-01 |
| 9159554 | Structure and method of forming metamorphic heteroepi materials and III-V channel structures on si | Errol Antonio C. Sanchez, Xinyu BAO, Wonseok Lee, David K. Carlson | 2015-10-13 |
| 9012328 | Carbon addition for low resistivity in situ doped silicon epitaxy | Xuebin Li, Saurabh Chopra, Yihwan Kim | 2015-04-21 |
| 8927066 | Method and apparatus for gas delivery | Yihwan Kim | 2015-01-06 |
| 8658540 | Methods for low temperature conditioning of process chambers | Yi-Chiau Huang, David K. Carlson, Errol Antonio C. Sanchez | 2014-02-25 |
| 8652945 | Epitaxy of high tensile silicon alloy for tensile strain applications | Xuebin Li, Saurabh Chopra, Yihwan Kim | 2014-02-18 |
| 8603898 | Method for forming group III/V conformal layers on silicon substrates | Xinyu BAO, Errol Antonio C. Sanchez, David K. Carlson | 2013-12-10 |
| 8586456 | Use of CL2 and/or HCL during silicon epitaxial film formation | Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang +2 more | 2013-11-19 |
| 8373233 | Highly N-type and P-type co-doping silicon for strain silicon application | — | 2013-02-12 |
| 8207023 | Methods of selectively depositing an epitaxial layer | Saurabh Chopra, Yihwan Kim | 2012-06-26 |
| 8029620 | Methods of forming carbon-containing silicon epitaxial layers | Yihwan Kim, Ali Zojaji | 2011-10-04 |
| 7960236 | Phosphorus containing Si epitaxial layers in N-type source/drain junctions | Saurabh Chopra, Yihwan Kim | 2011-06-14 |
| 7960256 | Use of CL2 and/or HCL during silicon epitaxial film formation | Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang +2 more | 2011-06-14 |
| 7897495 | Formation of epitaxial layer containing silicon and carbon | Andrew Lam, Yihwan Kim | 2011-03-01 |