Issued Patents All Time
Showing 26–50 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7422775 | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing | Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth S. Collins, Kai Ma +4 more | 2008-09-09 |
| 7393765 | Low temperature CVD process with selected stress of the CVD layer on CMOS devices | Hiroji Hanawa, Kartik Ramaswamy, Kenneth S. Collins, Biagio Gallo, Andrew Nguyen | 2008-07-01 |
| 7335611 | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer | Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth S. Collins, Kai Ma +4 more | 2008-02-26 |
| 7323401 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask | Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth S. Collins, Kai Ma +4 more | 2008-01-29 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage | Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Biagio Gallo +1 more | 2008-01-22 |
| 7312162 | Low temperature plasma deposition process for carbon layer deposition | Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth S. Collins, Kai Ma +4 more | 2007-12-25 |
| 7312148 | Copper barrier reflow process employing high speed optical annealing | Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth S. Collins, Kai Ma +4 more | 2007-12-25 |
| 7303982 | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage | Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Biagio Gallo +1 more | 2007-12-04 |
| 7294563 | Semiconductor on insulator vertical transistor fabrication and doping process | Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Biagio Gallo, Andrew Nguyen | 2007-11-13 |
| 7292428 | Electrostatic chuck with smart lift-pin mechanism for a plasma reactor | Hiroji Hanawa, Andrew Nguyen, Kenneth S. Collins, Kartik Ramaswamy, Biagio Gallo | 2007-11-06 |
| 7291360 | Chemical vapor deposition plasma process using plural ion shower grids | Hiroji Hanawa, Tsutomu Tanaka, Kenneth S. Collins, Kartik Ramaswamy, Andrew Nguyen | 2007-11-06 |
| 7291545 | Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage | Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Biagio Gallo +1 more | 2007-11-06 |
| 7288491 | Plasma immersion ion implantation process | Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Biagio Gallo | 2007-10-30 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid | Hiroji Hanawa, Tsutomu Tanaka, Kenneth S. Collins, Kartik Ramaswamy, Andrew Nguyen | 2007-07-17 |
| 7225047 | Method, system and medium for controlling semiconductor wafer processes using critical dimension measurements | Babak Adibi, Majeed A. Foad, Sasson Somekh | 2007-05-29 |
| 7223676 | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer | Hiroji Hanawa, Kartik Ramaswamy, Kenneth S. Collins, Biagio Gallo, Andrew Nguyen | 2007-05-29 |
| 7183177 | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement | Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Biagio Gallo, Andrew Nguyen | 2007-02-27 |
| 7166524 | Method for ion implanting insulator material to reduce dielectric constant | Rick J. Roberts, Kenneth S. Collins, Ken MacWilliams, Hiroji Hanawa, Kartik Ramaswamy +2 more | 2007-01-23 |
| 7137354 | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage | Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Biagio Gallo +1 more | 2006-11-21 |
| 7109098 | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing | Kartik Ramaswamy, Hiroji Hanawa, Biagio Gallo, Kenneth S. Collins, Kai Ma +4 more | 2006-09-19 |
| 7094670 | Plasma immersion ion implantation process | Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Biagio Gallo | 2006-08-22 |
| 7037813 | Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage | Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Biagio Gallo +1 more | 2006-05-02 |
| 6897131 | Advances in spike anneal processes for ultra shallow junctions | Balasubramanian Ramachandran, Ravi Jallepally, Ryan Boas, Sundar Ramamurthy, Houda Graoui +1 more | 2005-05-24 |
| 6893907 | Fabrication of silicon-on-insulator structure using plasma immersion ion implantation | Dan Maydan, Randir P. S. Thakur, Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy +2 more | 2005-05-17 |
| 6646276 | Ion implantation beam monitor | Robert J. Mitchell, Simon Povall, Leslie W Lane | 2003-11-11 |