Issued Patents All Time
Showing 76–100 of 115 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5924008 | Integrated circuit having local interconnect for reducing signal cross coupled noise | Robert Dawson, Basab Bandyopadhyay, H. Jim Fulford, Fred N. Hause, William S. Brennan | 1999-07-13 |
| 5918129 | Method of channel doping using diffusion from implanted polysilicon | H. Jim Fulford, Robert Dawson, Mark I. Gardner, Frederick N. Hause, Bradley T. Moore +1 more | 1999-06-29 |
| 5918126 | Method of fabricating an integrated circuit having devices arranged with different device densities using a bias differential to form devices with a uniform size | H. Jim Fulford, Robert Dawson, Mark I. Gardner, Frederick N. Hause, Bradley T. Moore +1 more | 1999-06-29 |
| 5899732 | Method of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor device | Mark I. Gardner, Derick J. Wristers, Robert Dawson, H. Jim Fulford, Frederick N. Hause +1 more | 1999-05-04 |
| 5899727 | Method of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization | Fred N. Hause, Basab Bandyopadhyay, H. Jim Fulford, Robert Dawson, William S. Brennan | 1999-05-04 |
| 5894168 | Mask generation technique for producing an integrated circuit with optimal polysilicon interconnect layout for achieving global planarization | Robert Dawson, Fred N. Hause, Basab Bandyopadhyay, H. Jim Fulford, William S. Brennan | 1999-04-13 |
| 5888675 | Reticle that compensates for radiation-induced lens error in a photolithographic system | Bradley T. Moore, Robert Dawson, H. Jim Fulford, Mark I. Gardner, Frederick N. Hause +1 more | 1999-03-30 |
| 5885887 | Method of making an igfet with selectively doped multilevel polysilicon gate | Frederick N. Hause, Robert Dawson, H. Jim Fulford Jr., Mark I. Gardner, Bradley T. Moore +1 more | 1999-03-23 |
| 5885877 | Composite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectric | Mark I. Gardner, Robert Dawson, H. Jim Fulford, Frederick N. Hause, Daniel Kadosh +2 more | 1999-03-23 |
| 5877058 | Method of forming an insulated-gate field-effect transistor with metal spacers | Mark I. Gardner, Robert Dawson, H. Jim Fulford, Frederick N. Hause, Bradley T. Moore +1 more | 1999-03-02 |
| 5869378 | Method of reducing overlap between gate electrode and LDD region | — | 1999-02-09 |
| 5854515 | Integrated circuit having conductors of enhanced cross-sectional area | Basab Bandyopadhyay, H. Jim Fulford, Robert Dawson, Fred N. Hause, William S. Brennan | 1998-12-29 |
| 5854131 | Integrated circuit having horizontally and vertically offset interconnect lines | Robert Dawson, Basab Bandyopadhyay, H. Jim Fulford Jr., Fred N. Hause, William S. Brennan | 1998-12-29 |
| 5851913 | Method for forming a multilevel interconnect structure of an integrated circuit by a single via etch and single fill process | William S. Brennan, Robert Dawson, H. Jim Fulford, Fred N. Hause, Basab Bandyopadhyay | 1998-12-22 |
| 5851891 | IGFET method of forming with silicide contact on ultra-thin gate | Robert Dawson, H. Jim Fulford, Mark I. Gardner, Frederick N. Hause, Bradley T. Moore +1 more | 1998-12-22 |
| 5851889 | Semiconductor gate conductor with a substantially uniform doping profile having minimal susceptibility to dopant penetration into the underlying gate dielectric | Robert Dawson | 1998-12-22 |
| 5850105 | Substantially planar semiconductor topography using dielectrics and chemical mechanical polish | Robert Dawson, Basab Bandyopadhyay, H. Jim Fulford, Fred N. Hause, William S. Brennan | 1998-12-15 |
| 5847462 | Integrated circuit having conductors of enhanced cross-sectional area with etch stop barrier layer | Basab Bandyopadhyay, H. Jim Fulford, William S. Brennan, Fred N. Hause, Robert Dawson | 1998-12-08 |
| 5846876 | Integrated circuit which uses a damascene process for producing staggered interconnect lines | Basab Bandyopadhyay, H. Jim Fulford, Robert Dawson, Fred N. Hause, William S. Brennan | 1998-12-08 |
| 5840451 | Individually controllable radiation sources for providing an image pattern in a photolithographic system | Bradley T. Moore, Robert Dawson, H. Jim Fulford, Mark I. Gardner, Frederick N. Hause +1 more | 1998-11-24 |
| 5837557 | Semiconductor fabrication method of forming a master layer to combine individually printed blocks of a circuit pattern | H. Jim Fulford, Robert Dawson, Mark I. Gardner, Frederick N. Hause, Bradley T. Moore +1 more | 1998-11-17 |
| 5830773 | Method for forming semiconductor field region dielectrics having globally planarized upper surfaces | William S. Brennan, Robert Dawson, Fred N. Hause, Basab Bandyopadhyay, H. Jim Fulford | 1998-11-03 |
| 5827776 | Method of making an integrated circuit which uses an etch stop for producing staggered interconnect lines | Basab Bandyopadhyay, H. Jim Fulford, Robert Dawson, Fred N. Hause, William S. Brennan | 1998-10-27 |
| 5827761 | Method of making NMOS and devices with sequentially formed gates having different gate lengths | H. Jim Fulford, Robert Dawson, Mark I. Gardner, Frederick N. Hause, Bradley T. Moore +1 more | 1998-10-27 |
| 5814555 | Interlevel dielectric with air gaps to lessen capacitive coupling | Basab Bandyopadhyay, H. Jim Fulford, Robert Dawson, Fred N. Hause, William S. Brennan | 1998-09-29 |