Issued Patents All Time
Showing 26–47 of 47 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6991990 | Method for forming a field effect transistor having a high-k gate dielectric | Huicai Zhong | 2006-01-31 |
| 6905971 | Treatment of dielectric material to enhance etch rate | Cyrus E. Tabery, Chih-Yuh Yang, William G. En, Minh Van Ngo, Ming-Ren Lin | 2005-06-14 |
| 6902977 | Method for forming polysilicon gate on high-k dielectric and related structure | George Jonathan Kluth, Qi Xiang, Huicai Zhong | 2005-06-07 |
| 6872613 | Method for integrating metals having different work functions to form CMOS gates having a high-k gate dielectric and related structure | Qi Xiang, Huicai Zhong, Jung-Suk Goo, Allison Holbrook, George Jonathan Kluth | 2005-03-29 |
| 6849925 | Preparation of composite high-K/standard-K dielectrics for semiconductor devices | Arvind Halliyal, Minh Van Ngo, Robert B. Ogle | 2005-02-01 |
| 6797572 | Method for forming a field effect transistor having a high-k gate dielectric and related structure | Huicai Zhong | 2004-09-28 |
| 6790755 | Preparation of stack high-K gate dielectrics with nitrided layer | — | 2004-09-14 |
| 6764898 | Implantation into high-K dielectric material after gate etch to facilitate removal | William G. En, Minh Van Ngo, Ming-Ren Lin | 2004-07-20 |
| 6762454 | Stacked polysilicon layer for boron penetration inhibition | Effiong Ibok, Arvind Halliyal, Minh Van Ngo | 2004-07-13 |
| 6759346 | Method of forming dielectric layers | — | 2004-07-06 |
| 6693004 | Interfacial barrier layer in semiconductor devices with high-K gate dielectric material | Arvind Halliyal, Minh Van Ngo, William G. En, Effiong Ibok | 2004-02-17 |
| 6645882 | Preparation of composite high-K/standard-K dielectrics for semiconductor devices | Arvind Halliyal, Minh Van Ngo, Robert B. Ogle | 2003-11-11 |
| 6620671 | Method of fabricating transistor having a single crystalline gate conductor | Haihong Wang | 2003-09-16 |
| 6621114 | MOS transistors with high-k dielectric gate insulator for reducing remote scattering | Hyeon-Seag Kim | 2003-09-16 |
| 6607973 | Preparation of high-k nitride silicate layers by cyclic molecular layer deposition | — | 2003-08-19 |
| 6586349 | Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices | Arvind Halliyal | 2003-07-01 |
| 6562491 | Preparation of composite high-K dielectrics | — | 2003-05-13 |
| 6559014 | Preparation of composite high-K / standard-K dielectrics for semiconductor devices | — | 2003-05-06 |
| 6451641 | Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material | Arvind Halliyal, Robert B. Ogle, Fred Cheung, Effiong Ibok | 2002-09-17 |
| 6448127 | Process for formation of ultra-thin base oxide in high k/oxide stack gate dielectrics of mosfets | Qi Xiang, Colman Wong | 2002-09-10 |
| 6376323 | Fabrication of gate of P-channel field effect transistor with added implantation before patterning of the gate | Hyeon-Seag Kim | 2002-04-23 |
| 6187657 | Dual material gate MOSFET technique | Qi Xiang | 2001-02-13 |