Issued Patents 2024
Showing 25 most recent of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12170319 | Dual contact process with stacked metal layers | Kevin T. Cook, Gilbert Dewey, Nazila Haratipour, Ralph T. Troeger, Christopher J. Jezewski +1 more | 2024-12-17 |
| 12166124 | Gate-all-around integrated circuit structures having germanium-doped nanoribbon channel structures | Ryan Murray Hickey, Glenn A. Glass, Rushabh SHAH, Ju H. Nam | 2024-12-10 |
| 12159901 | Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs | Cory Bomberger, Mark Bohr, Tahir Ghani, Biswajeet Guha | 2024-12-03 |
| 12148751 | Use of a placeholder for backside contact formation for transistor arrangements | Andy Wei, Mauro J. Kobrinsky, Guillaume Bouche | 2024-11-19 |
| 12119387 | Low resistance approaches for fabricating contacts and the resulting structures | Gilbert Dewey, Nazila Haratipour, Siddharth Chouksey, Jack T. Kavalieros, Jitendra Kumar Jha +6 more | 2024-10-15 |
| 12107085 | Interconnect techniques for electrically connecting source/drain regions of stacked transistors | Aaron D. Lilak, Gilbert Dewey, Cheng-Ying Huang, Christopher J. Jezewski, Ehren Mannebach +4 more | 2024-10-01 |
| 12094881 | Arsenic-doped epitaxial source/drain regions for NMOS | Ryan Keech, Nicholas G. Minutillo, Ritesh Jhaveri | 2024-09-17 |
| 12046600 | Techniques for achieving multiple transistor fin dimensions on a single die | Glenn A. Glass | 2024-07-23 |
| 12046654 | Integrated circuit structures including a titanium silicide material | Dan S. LAVRIC, Glenn A. Glass, Thomas T. TROEGER, Suresh Vishwanath, Jitendra Kumar Jha +2 more | 2024-07-23 |
| 12046517 | Self-aligned 3-D epitaxial structures for MOS device fabrication | Glenn A. Glass, Daniel B. Aubertine, Gaurav Thareja, Tahir Ghani | 2024-07-23 |
| 12027585 | Source or drain structures with low resistivity | Cory Bomberger, Suresh Vishwanath | 2024-07-02 |
| 12027417 | Source or drain structures with high germanium concentration capping layer | Cory Bomberger, Suresh Vishwanath, Yulia Tolstova, Pratik A. Patel, Szuya S. Liao | 2024-07-02 |
| 12021081 | Techniques for achieving multiple transistor fin dimensions on a single die | Glenn A. Glass | 2024-06-25 |
| 12021149 | Fin smoothing and integrated circuit structures resulting therefrom | Cory Bomberger, Tahir Ghani, Anupama Bowonder | 2024-06-25 |
| 11996447 | Field effect transistors with gate electrode self-aligned to semiconductor fin | Sean T. Ma, Matthew V. Metz, Willy Rachmady, Gilbert Dewey, Chandra S. Mohapatra +2 more | 2024-05-28 |
| 11996404 | Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material | Cheng-Ying Huang, Gilbert Dewey, Ashish Agrawal, Kimin Jun, Willy Rachmady +5 more | 2024-05-28 |
| 11990513 | Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures | Cory Bomberger, Susmita Ghose, Siddharth Chouksey | 2024-05-21 |
| 11984449 | Channel structures with sub-fin dopant diffusion blocking layers | Cory Bomberger, Stephen M. Cea, Biswajeet Guha, Anupama Bowonder, Tahir Ghani | 2024-05-14 |
| 11978784 | Gate-all-around integrated circuit structures having germanium nanowire channel structures | Cory Bomberger, Susmita Ghose, Zachary Geiger | 2024-05-07 |
| 11973143 | Source or drain structures for germanium N-channel devices | Ryan Keech, Benjamin Chu-Kung, Subrina RAFIQUE, Devin Merrill, Ashish Agrawal +4 more | 2024-04-30 |
| 11942526 | Integrated circuit contact structures | Patrick Morrow, Glenn A. Glass, Rishabh Mehandru | 2024-03-26 |
| 11935887 | Source or drain structures with vertical trenches | Ryan Keech, Nicholas G. Minutillo, Aaron A. Budrevich, Peter Wells | 2024-03-19 |
| 11929320 | Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication | Gilbert Dewey, Ryan Keech, Cory Bomberger, Cheng-Ying Huang, Ashish Agrawal +1 more | 2024-03-12 |
| 11923421 | Integrated circuit structures having germanium-based channels | Siddharth Chouksey, Glenn A. Glass, Harold W. Kennel, Jack T. Kavalieros, Tahir Ghani +2 more | 2024-03-05 |
| 11923410 | Transistor with isolation below source and drain | Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Sean T. Ma +3 more | 2024-03-05 |