| 12183739 |
Ribbon or wire transistor stack with selective dipole threshold voltage shifter |
Nicole K. Thomas, Eric Mattson, Sudarat Lee, Scott B. Clendenning, Tobias Brown-Heft +6 more |
2024-12-31 |
$16,542,000 |
| 12183668 |
Thin-film transistors and MIM capacitors in exclusion zones |
Abhishek A. Sharma, Willy Rachmady, Cheng-Ying Huang, Rajat K. Paul |
2024-12-31 |
$16,542,000 |
| 12183831 |
Self-aligned contacts for thin film transistors |
Van H. Le, Abhishek A. Sharma, Benjamin Chu-Kung, Ravi Pillarisetty, Miriam Reshotko +4 more |
2024-12-31 |
$16,542,000 |
| 12170319 |
Dual contact process with stacked metal layers |
Kevin T. Cook, Anand S. Murthy, Nazila Haratipour, Ralph T. Troeger, Christopher J. Jezewski +1 more |
2024-12-17 |
$33,648,000 |
| 12148806 |
Stacked source-drain-gate connection and process for forming such |
Ehren Mannebach, Aaron D. Lilak, Hui Jae Yoo, Patrick Morrow, Anh Phan +2 more |
2024-11-19 |
$25,575,000 |
| 12142689 |
Transistor including wrap around source and drain contacts |
Sean T. Ma, Abhishek A. Sharma, Jack T. Kavalieros, Van H. Le |
2024-11-12 |
$28,491,000 |
| 12125917 |
Thin film transistors having double gates |
Abhishek A. Sharma, Van H. Le, Jack T. Kavalieros, Tahir Ghani |
2024-10-22 |
$18,859,000 |
| 12119387 |
Low resistance approaches for fabricating contacts and the resulting structures |
Nazila Haratipour, Siddharth Chouksey, Jack T. Kavalieros, Jitendra Kumar Jha, Matthew V. Metz +6 more |
2024-10-15 |
$19,078,000 |
| 12120865 |
Arrays of double-sided dram cells including capacitors on the frontside and backside of a stacked transistor structure |
Cheng-Ying Huang, Ashish Agrawal, Abhishek A. Sharma, Wilfred Gomes, Jack T. Kavalieros |
2024-10-15 |
$19,078,000 |
| 12119409 |
Multi-layer crystalline back gated thin film transistor |
Van H. Le, Abhishek A. Sharma, Kent Millard, Jack T. Kavalieros, Shriram Shivaraman +6 more |
2024-10-15 |
$19,078,000 |
| 12107085 |
Interconnect techniques for electrically connecting source/drain regions of stacked transistors |
Aaron D. Lilak, Cheng-Ying Huang, Christopher J. Jezewski, Ehren Mannebach, Rishabh Mehandru +4 more |
2024-10-01 |
$20,560,000 |
| 12087750 |
Stacked-substrate FPGA semiconductor devices |
Abhishek A. Sharma, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros |
2024-09-10 |
$16,964,000 |
| 12080605 |
Backside contacts for semiconductor devices |
Aaron D. Lilak, Ehren Mannebach, Anh Phan, Richard E. Schenker, Stephanie A. Bojarski +4 more |
2024-09-03 |
$14,017,000 |
| 12068319 |
High performance semiconductor oxide material channel regions for NMOS |
Willy Rachmady, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz, Sean T. Ma +3 more |
2024-08-20 |
$20,163,000 |
| 12033896 |
Isolation wall stressor structures to improve channel stress and their methods of fabrication |
Aaron D. Lilak, Christopher J. Jezewski, Willy Rachmady, Rishabh Mehandru, Anh Phan |
2024-07-09 |
$24,938,000 |
| 12020929 |
Epitaxial layer with substantially parallel sides |
Cheng-Ying Huang, Jack T. Kavalieros, Aaron D. Lilak, Ehren Mannebach, Patrick Morrow +3 more |
2024-06-25 |
$22,163,000 |
| 12009433 |
Multi-dielectric gate stack for crystalline thin film transistors |
Van H. Le, Inanc Meric, Sean T. Ma, Abhishek A. Sharma, Miriam Reshotko +6 more |
2024-06-11 |
$21,221,000 |
| 11996447 |
Field effect transistors with gate electrode self-aligned to semiconductor fin |
Sean T. Ma, Matthew V. Metz, Willy Rachmady, Chandra S. Mohapatra, Jack T. Kavalieros +2 more |
2024-05-28 |
$30,739,000 |
| 11996404 |
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material |
Cheng-Ying Huang, Ashish Agrawal, Kimin Jun, Willy Rachmady, Zachary Geiger +5 more |
2024-05-28 |
$30,739,000 |
| 11996408 |
Leave-behind protective layer having secondary purpose |
Aaron D. Lilak, Anh Phan, Ehren Mannebach, Cheng-Ying Huang, Stephanie A. Bojarski +2 more |
2024-05-28 |
$30,739,000 |
| 11996411 |
Stacked forksheet transistors |
Cheng-Ying Huang, Anh Phan, Nicole K. Thomas, Urusa Alaan, Seung Hoon Sung +8 more |
2024-05-28 |
$30,739,000 |
| 11997847 |
Thin film transistors with spacer controlled gate length |
Abhishek A. Sharma, Van H. Le, Shriram Shivaraman, Yih Wang, Tahir Ghani +1 more |
2024-05-28 |
$30,739,000 |
| 11990476 |
Semiconductor nanowire device having (111)-plane channel sidewalls |
Cory E. Weber, Harold W. Kennel, Willy Rachmady |
2024-05-21 |
$18,840,000 |
| 11942416 |
Sideways vias in isolation areas to contact interior layers in stacked devices |
Ehren Mannebach, Aaron D. Lilak, Hui Jae Yoo, Patrick Morrow, Anh Phan +3 more |
2024-03-26 |
$33,708,000 |
| 11935891 |
Non-silicon N-type and P-type stacked transistors for integrated circuit devices |
Patrick Morrow, Ravi Pillarisetty, Rishabh Mehandru, Cheng-Ying Huang, Willy Rachmady +1 more |
2024-03-19 |
$28,784,000 |
