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Stacked source-drain-gate connection and process for forming such |
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Interconnect techniques for electrically connecting source/drain regions of stacked transistors |
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| 12080605 |
Backside contacts for semiconductor devices |
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Isolation wall stressor structures to improve channel stress and their methods of fabrication |
Aaron D. Lilak, Christopher J. Jezewski, Willy Rachmady, Rishabh Mehandru, Gilbert Dewey |
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| 12020929 |
Epitaxial layer with substantially parallel sides |
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Stacked forksheet transistors |
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| 11996408 |
Leave-behind protective layer having secondary purpose |
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| 11942416 |
Sideways vias in isolation areas to contact interior layers in stacked devices |
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| 11916118 |
Stacked source-drain-gate connection and process for forming such |
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| 11894372 |
Stacked trigate transistors with dielectric isolation and process for forming such |
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| 11869894 |
Metallization structures for stacked device connectivity and their methods of fabrication |
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