Issued Patents 2024
Showing 25 most recent of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12183668 | Thin-film transistors and MIM capacitors in exclusion zones | Abhishek A. Sharma, Cheng-Ying Huang, Gilbert Dewey, Rajat K. Paul | 2024-12-31 |
| 12176408 | Localized spacer for nanowire transistors and methods of fabrication | Sudipto Naskar, Hsin-Fen Li, Christopher Parker, Prashant Wadhwa, Tahir Ghani +2 more | 2024-12-24 |
| RE50222 | Non-planar gate all-around device and method of fabrication thereof | Ravi Pillarisetty, Van H. Le, Jack T. Kavaileros, Robert S. Chau, Jessica S. Kachian | 2024-11-26 |
| 12148806 | Stacked source-drain-gate connection and process for forming such | Ehren Mannebach, Aaron D. Lilak, Hui Jae Yoo, Patrick Morrow, Anh Phan +2 more | 2024-11-19 |
| 12142634 | Silicon and silicon germanium nanowire structures | Kelin J. Kuhn, Seiyon Kim, Rafael Rios, Stephen M. Cea, Martin D. Giles +3 more | 2024-11-12 |
| 12107085 | Interconnect techniques for electrically connecting source/drain regions of stacked transistors | Aaron D. Lilak, Gilbert Dewey, Cheng-Ying Huang, Christopher J. Jezewski, Ehren Mannebach +4 more | 2024-10-01 |
| 12087750 | Stacked-substrate FPGA semiconductor devices | Abhishek A. Sharma, Ravi Pillarisetty, Gilbert Dewey, Jack T. Kavalieros | 2024-09-10 |
| 12080605 | Backside contacts for semiconductor devices | Aaron D. Lilak, Ehren Mannebach, Anh Phan, Richard E. Schenker, Stephanie A. Bojarski +4 more | 2024-09-03 |
| 12068319 | High performance semiconductor oxide material channel regions for NMOS | Gilbert Dewey, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz, Sean T. Ma +3 more | 2024-08-20 |
| 12051723 | PN-body-tied field effect transistors | Aaron D. Lilak, Kerryann Marrietta Foley, Sayed Hasan, Patrick Morrow | 2024-07-30 |
| 12046637 | Nanowire transistor fabrication with hardmask layers | Seung Hoon Sung, Seiyon Kim, Kelin J. Kuhn, Jack T. Kavalieros | 2024-07-23 |
| 12033896 | Isolation wall stressor structures to improve channel stress and their methods of fabrication | Aaron D. Lilak, Christopher J. Jezewski, Rishabh Mehandru, Gilbert Dewey, Anh Phan | 2024-07-09 |
| 12020929 | Epitaxial layer with substantially parallel sides | Cheng-Ying Huang, Gilbert Dewey, Jack T. Kavalieros, Aaron D. Lilak, Ehren Mannebach +3 more | 2024-06-25 |
| 11996404 | Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material | Cheng-Ying Huang, Gilbert Dewey, Ashish Agrawal, Kimin Jun, Zachary Geiger +5 more | 2024-05-28 |
| 11996408 | Leave-behind protective layer having secondary purpose | Aaron D. Lilak, Anh Phan, Ehren Mannebach, Cheng-Ying Huang, Stephanie A. Bojarski +2 more | 2024-05-28 |
| 11996411 | Stacked forksheet transistors | Cheng-Ying Huang, Gilbert Dewey, Anh Phan, Nicole K. Thomas, Urusa Alaan +8 more | 2024-05-28 |
| 11996447 | Field effect transistors with gate electrode self-aligned to semiconductor fin | Sean T. Ma, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +2 more | 2024-05-28 |
| 11990476 | Semiconductor nanowire device having (111)-plane channel sidewalls | Cory E. Weber, Harold W. Kennel, Gilbert Dewey | 2024-05-21 |
| 11942416 | Sideways vias in isolation areas to contact interior layers in stacked devices | Ehren Mannebach, Aaron D. Lilak, Hui Jae Yoo, Patrick Morrow, Anh Phan +3 more | 2024-03-26 |
| 11935891 | Non-silicon N-type and P-type stacked transistors for integrated circuit devices | Gilbert Dewey, Patrick Morrow, Ravi Pillarisetty, Rishabh Mehandru, Cheng-Ying Huang +1 more | 2024-03-19 |
| 11929320 | Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication | Gilbert Dewey, Ryan Keech, Cory Bomberger, Cheng-Ying Huang, Ashish Agrawal +1 more | 2024-03-12 |
| 11929435 | Ferroelectric gate stack for band-to-band tunneling reduction | Gilbert Dewey, Jack T. Kavalieros, Cheng-Ying Huang, Matthew V. Metz, Sean T. Ma +2 more | 2024-03-12 |
| 11923410 | Transistor with isolation below source and drain | Cheng-Ying Huang, Matthew V. Metz, Nicholas G. Minutillo, Sean T. Ma, Anand S. Murthy +3 more | 2024-03-05 |
| 11923412 | Sub-fin leakage reduction for template strained materials | Rishabh Mehandru, Stephen M. Cea, Anupama Bowonder, Juhyung Nam | 2024-03-05 |
| 11916118 | Stacked source-drain-gate connection and process for forming such | Ehren Mannebach, Aaron D. Lilak, Hui Jae Yoo, Patrick Morrow, Anh Phan +2 more | 2024-02-27 |