Issued Patents 2024
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12094881 | Arsenic-doped epitaxial source/drain regions for NMOS | Anand S. Murthy, Ryan Keech, Ritesh Jhaveri | 2024-09-17 |
| 11935887 | Source or drain structures with vertical trenches | Ryan Keech, Anand S. Murthy, Aaron A. Budrevich, Peter Wells | 2024-03-19 |
| 11923410 | Transistor with isolation below source and drain | Willy Rachmady, Cheng-Ying Huang, Matthew V. Metz, Sean T. Ma, Anand S. Murthy +3 more | 2024-03-05 |