| 12159901 |
Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs |
Anand S. Murthy, Mark Bohr, Tahir Ghani, Biswajeet Guha |
2024-12-03 |
| 12027585 |
Source or drain structures with low resistivity |
Anand S. Murthy, Suresh Vishwanath |
2024-07-02 |
| 12027417 |
Source or drain structures with high germanium concentration capping layer |
Suresh Vishwanath, Yulia Tolstova, Pratik A. Patel, Szuya S. Liao, Anand S. Murthy |
2024-07-02 |
| 12021149 |
Fin smoothing and integrated circuit structures resulting therefrom |
Anand S. Murthy, Tahir Ghani, Anupama Bowonder |
2024-06-25 |
| 11996404 |
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material |
Cheng-Ying Huang, Gilbert Dewey, Ashish Agrawal, Kimin Jun, Willy Rachmady +5 more |
2024-05-28 |
| 11990513 |
Gate-all-around integrated circuit structures having embedded GeSnB source or drain structures |
Anand S. Murthy, Susmita Ghose, Siddharth Chouksey |
2024-05-21 |
| 11984449 |
Channel structures with sub-fin dopant diffusion blocking layers |
Anand S. Murthy, Stephen M. Cea, Biswajeet Guha, Anupama Bowonder, Tahir Ghani |
2024-05-14 |
| 11978784 |
Gate-all-around integrated circuit structures having germanium nanowire channel structures |
Anand S. Murthy, Susmita Ghose, Zachary Geiger |
2024-05-07 |
| 11929320 |
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication |
Gilbert Dewey, Ryan Keech, Cheng-Ying Huang, Ashish Agrawal, Willy Rachmady +1 more |
2024-03-12 |
| 11887988 |
Thin film transistor structures with regrown source and drain |
Ashish Agrawal, Jack T. Kavalieros, Anand S. Murthy, Gilbert Dewey, Matthew V. Metz +2 more |
2024-01-30 |