| 12120865 |
Arrays of double-sided dram cells including capacitors on the frontside and backside of a stacked transistor structure |
Cheng-Ying Huang, Gilbert Dewey, Abhishek A. Sharma, Wilfred Gomes, Jack T. Kavalieros |
2024-10-15 |
| 11996404 |
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material |
Cheng-Ying Huang, Gilbert Dewey, Kimin Jun, Willy Rachmady, Zachary Geiger +5 more |
2024-05-28 |
| 11973143 |
Source or drain structures for germanium N-channel devices |
Ryan Keech, Benjamin Chu-Kung, Subrina RAFIQUE, Devin Merrill, Harold W. Kennel +4 more |
2024-04-30 |
| 11929320 |
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication |
Gilbert Dewey, Ryan Keech, Cory Bomberger, Cheng-Ying Huang, Willy Rachmady +1 more |
2024-03-12 |
| 11923421 |
Integrated circuit structures having germanium-based channels |
Siddharth Chouksey, Glenn A. Glass, Anand S. Murthy, Harold W. Kennel, Jack T. Kavalieros +2 more |
2024-03-05 |
| 11887988 |
Thin film transistor structures with regrown source and drain |
Jack T. Kavalieros, Anand S. Murthy, Gilbert Dewey, Matthew V. Metz, Willy Rachmady +2 more |
2024-01-30 |
| 11862715 |
Vertical tunneling field-effect transistors |
Cheng-Ying Huang, Jack T. Kavalieros, Ian A. Young, Matthew V. Metz, Willy Rachmady +2 more |
2024-01-02 |