| 12137574 |
Integration of ferroelectric memory devices having stacked electrodes with transistors |
Sasikanth Manipatruni, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya |
2024-11-05 |
| 12113097 |
Ferroelectric capacitor integrated with logic |
Sasikanth Manipatruni, Rajeev Kumar Dokania, Ramamoorthy Ramesh, Amrita Mathuriya |
2024-10-08 |
| 12088297 |
Majority gate based low power ferroelectric based adder with reset mechanism |
Sasikanth Manipatruni, Yuan-Sheng Fang, Robert Menezes, Rajeev Kumar Dokania, Ramamoorthy Ramesh +1 more |
2024-09-10 |
| 12046517 |
Self-aligned 3-D epitaxial structures for MOS device fabrication |
Glenn A. Glass, Daniel B. Aubertine, Anand S. Murthy, Tahir Ghani |
2024-07-23 |
| 11949017 |
Doped polar layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-04-02 |
| 11949018 |
Doped polar layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-04-02 |
| 11916149 |
Doped polar layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-02-27 |
| 11908943 |
Manganese-doped perovskite layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-02-20 |
| 11888066 |
Doped polar layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-01-30 |
| 11888067 |
B-site doped perovskite layers and semiconductor device incorporating same |
Ramesh Ramamoorthy, Sasikanth Manipatruni |
2024-01-30 |
| 11863183 |
Low power non-linear polar material based threshold logic gate multiplier |
Sasikanth Manipatruni, Yuan-Sheng Fang, Robert Menezes, Rajeev Kumar Dokania, Ramamoorthy Ramesh +1 more |
2024-01-02 |