Issued Patents 2023
Showing 26–50 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11735590 | Fin stack including tensile-strained and compressively strained fin portions | Julien Frougier, Ruilong Xie, Chanro Park | 2023-08-22 |
| 11728340 | Single diffusion break isolation for gate-all-around field-effect transistor devices | Wenyu Xu, Xin Miao, Chen Zhang | 2023-08-15 |
| 11728433 | Vertical transistor with self-aligned gate | Juntao Li, Ruilong Xie, Chanro Park | 2023-08-15 |
| 11728428 | Dielectric isolated fin with improved fin profile | Bruce B. Doris, Darsen D. Lu, Ali Khakifirooz, Kern Rim | 2023-08-15 |
| 11710699 | Complementary FET (CFET) buried sidewall contact with spacer foot | Ruilong Xie, Jingyun Zhang, Reinaldo Vega | 2023-07-25 |
| 11705517 | Nanosheet transistors with strained channel regions | Xin Miao, Wenyu Xu, Chen Zhang | 2023-07-18 |
| 11705504 | Stacked nanosheet transistor with defect free channel | Lan Yu, Heng Wu, Chen Zhang | 2023-07-18 |
| 11696518 | Hybrid non-volatile memory cell | Carl Radens, Ruilong Xie, Juntao Li | 2023-07-04 |
| 11695038 | Forming single and double diffusion breaks for fin field-effect transistor structures | Juntao Li, Ruilong Xie, Junli Wang | 2023-07-04 |
| 11688626 | Nanosheet transistor with self-aligned dielectric pillar | Ruilong Xie, Julien Frougier | 2023-06-27 |
| 11688775 | Method of forming first and second contacts self-aligned top source/drain region of a vertical field-effect transistor | Juntao Li, Brent A. Anderson | 2023-06-27 |
| 11690305 | Phase change memory cell with an airgap to allow for the expansion and restriction of the PCM material | Ruilong Xie, Carl Radens, Juntao Li | 2023-06-27 |
| 11682674 | Stacked nanosheet complementary metal oxide semiconductor field effect transistor devices | Zhenxing Bi, Juntao Li | 2023-06-20 |
| 11683998 | Vertical phase change bridge memory cell | Juntao Li, Carl Radens, Ruilong Xie | 2023-06-20 |
| 11682715 | Forming nanosheet transistor using sacrificial spacer and inner spacers | Julien Frougier, Nicolas Loubet | 2023-06-20 |
| 11682582 | Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors | Juntao Li, Zhenxing Bi, Dexin Kong | 2023-06-20 |
| 11674947 | Nanopore structures | — | 2023-06-13 |
| 11677026 | Transistor having wrap-around source/drain contacts | Zhenxing Bi, Juntao Li, Peng Xu | 2023-06-13 |
| 11673766 | Elevator analytics facilitating passenger destination prediction and resource optimization | Gauri Karve, Tara Astigarraga, Eric R. Miller, Fee Li Lie, Sean Teehan +1 more | 2023-06-13 |
| 11664375 | Minimizing shorting between FinFET epitaxial regions | Balasubramanian Pranatharthiharan, Alexander Reznicek, Charan V. Surisetty | 2023-05-30 |
| 11665987 | Integrated switch using stacked phase change materials | Juntao Li, Dexin Kong, Zheng Xu | 2023-05-30 |
| 11664422 | Nanosheet transistor with ultra low-k spacer and improved patterning robustness | Chen Zhang, Xin Miao, Wenyu Xu | 2023-05-30 |
| 11658062 | Air gap spacer formation for nano-scale semiconductor devices | Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Sanjay C. Mehta, Son V. Nguyen +2 more | 2023-05-23 |
| 11652156 | Nanosheet transistor with asymmetric gate stack | Ruilong Xie, Carl Radens, Juntao Li, Dechao Guo, Tao Li +1 more | 2023-05-16 |
| 11652161 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan | 2023-05-16 |