Issued Patents 2023
Showing 25 most recent of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11855191 | Vertical FET with contact to gate above active fin | Brent A. Anderson, Junli Wang, Indira Seshadri, Ruilong Xie, Joshua M. Rubin +1 more | 2023-12-26 |
| 11843031 | Short gate on active and longer gate on STI for nanosheets | Kangguo Cheng, Wenyu Xu, Ruilong Xie | 2023-12-12 |
| 11822404 | Power distribution system and server system | Zhen Qin, Bin Luo | 2023-11-21 |
| 11817501 | Three-dimensional, monolithically stacked field effect transistors formed on the front and backside of a wafer | Sung-Dae Suk, Somnath Ghosh, Junli Wang, Devendra K. Sadana, Dechao Guo | 2023-11-14 |
| 11817497 | Vertical field effect transistor inverter with single fin device | Junli Wang, Ruilong Xie, Alexander Reznicek | 2023-11-14 |
| 11798851 | Work function metal patterning for nanosheet CFETs | Ruilong Xie, Kangguo Cheng, Juntao Li | 2023-10-24 |
| 11777034 | Hybrid complementary field effect transistor device | Ruilong Xie, Jingyun Zhang, Junli Wang, Pietro Montanini | 2023-10-03 |
| 11769796 | Hybrid complementary metal-oxide semiconductor field effect transistor nanosheet device | Ruilong Xie, Tenko Yamashita | 2023-09-26 |
| 11764298 | VTFET with buried power rails | Ruilong Xie, Heng Wu, Junli Wang, Brent A. Anderson | 2023-09-19 |
| 11764259 | Vertical field-effect transistor with dielectric fin extension | Tenko Yamashita, Xin Miao, Wenyu Xu, Kangguo Cheng | 2023-09-19 |
| 11757036 | Moon-shaped bottom spacer for vertical transport field effect transistor (VTFET) devices | Ruilong Xie, Julien Frougier, Alexander Reznicek, Shogo Mochizuki | 2023-09-12 |
| 11756957 | Reducing gate resistance in stacked vertical transport field effect transistors | Heng Wu, Kangguo Cheng, Tenko Yamashita, Joshua M. Rubin | 2023-09-12 |
| D996401 | Microphone | Runqiang Han, Xinliang Lv, Xiguang Zheng, Qiong Yan, Qiao Han | 2023-08-22 |
| 11735658 | Tunnel field-effect transistor with reduced subthreshold swing | Xin Miao, Kangguo Cheng, Wenyu Xu | 2023-08-22 |
| 11728340 | Single diffusion break isolation for gate-all-around field-effect transistor devices | Wenyu Xu, Xin Miao, Kangguo Cheng | 2023-08-15 |
| 11705504 | Stacked nanosheet transistor with defect free channel | Lan Yu, Kangguo Cheng, Heng Wu | 2023-07-18 |
| 11705517 | Nanosheet transistors with strained channel regions | Xin Miao, Kangguo Cheng, Wenyu Xu | 2023-07-18 |
| 11665877 | Stacked FET SRAM design | Ruilong Xie, Junli Wang, Dechao Guo | 2023-05-30 |
| 11664422 | Nanosheet transistor with ultra low-k spacer and improved patterning robustness | Kangguo Cheng, Xin Miao, Wenyu Xu | 2023-05-30 |
| 11652006 | FinFET complementary metal-oxide-semiconductor (CMOS) devices | Tenko Yamashita, Teresa J. Wu | 2023-05-16 |
| 11637041 | Method of forming high mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator | Xin Miao, Kangguo Cheng, Wenyu Xu | 2023-04-25 |
| 11636836 | Method for processing audio and electronic device | Xiguang Zheng | 2023-04-25 |
| 11621348 | Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction | Kangguo Cheng, Xin Miao, Wenyu Xu | 2023-04-04 |
| 11621326 | Vertical field effect transistor with crosslink fin arrangement | Indira Seshadri, Ruilong Xie, Ekmini Anuja De Silva | 2023-04-04 |
| 11575042 | Tunnel field-effect transistor with reduced subthreshold swing | Xin Miao, Kangguo Cheng, Wenyu Xu | 2023-02-07 |