Issued Patents 2023
Showing 1–25 of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11848357 | Strained superlattice | Kangguo Cheng, Shogo Mochizuki | 2023-12-19 |
| 11837604 | Forming stacked nanosheet semiconductor devices with optimal crystalline orientations around devices | Kangguo Cheng, Shogo Mochizuki | 2023-12-05 |
| 11812675 | Filament confinement in resistive random access memory | Kangguo Cheng, Dexin Kong, Zheng Xu | 2023-11-07 |
| 11798851 | Work function metal patterning for nanosheet CFETs | Ruilong Xie, Chen Zhang, Kangguo Cheng | 2023-10-24 |
| 11791342 | Varactor integrated with complementary metal-oxide semiconductor devices | Kangguo Cheng, Julien Frougier, Ruilong Xie | 2023-10-17 |
| 11791199 | Nanosheet IC device with single diffusion break | Ruilong Xie, Kangguo Cheng, Carl Radens | 2023-10-17 |
| 11764265 | Nanosheet transistor with inner spacers | Kangguo Cheng, Ruilong Xie, Julien Frougier | 2023-09-19 |
| 11728433 | Vertical transistor with self-aligned gate | Kangguo Cheng, Ruilong Xie, Chanro Park | 2023-08-15 |
| 11696518 | Hybrid non-volatile memory cell | Kangguo Cheng, Carl Radens, Ruilong Xie | 2023-07-04 |
| 11695038 | Forming single and double diffusion breaks for fin field-effect transistor structures | Kangguo Cheng, Ruilong Xie, Junli Wang | 2023-07-04 |
| 11690305 | Phase change memory cell with an airgap to allow for the expansion and restriction of the PCM material | Kangguo Cheng, Ruilong Xie, Carl Radens | 2023-06-27 |
| 11688775 | Method of forming first and second contacts self-aligned top source/drain region of a vertical field-effect transistor | Kangguo Cheng, Brent A. Anderson | 2023-06-27 |
| 11683998 | Vertical phase change bridge memory cell | Kangguo Cheng, Carl Radens, Ruilong Xie | 2023-06-20 |
| 11682582 | Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors | Kangguo Cheng, Zhenxing Bi, Dexin Kong | 2023-06-20 |
| 11682674 | Stacked nanosheet complementary metal oxide semiconductor field effect transistor devices | Zhenxing Bi, Kangguo Cheng | 2023-06-20 |
| 11677026 | Transistor having wrap-around source/drain contacts | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2023-06-13 |
| 11665987 | Integrated switch using stacked phase change materials | Kangguo Cheng, Dexin Kong, Zheng Xu | 2023-05-30 |
| 11658062 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Eric G. Liniger, Sanjay C. Mehta, Son V. Nguyen +2 more | 2023-05-23 |
| 11652156 | Nanosheet transistor with asymmetric gate stack | Ruilong Xie, Carl Radens, Kangguo Cheng, Dechao Guo, Tao Li +1 more | 2023-05-16 |
| 11637238 | Resistive random-access memory cell and manufacturing method thereof | Kangguo Cheng, Chanro Park, Ruilong Xie | 2023-04-25 |
| 11637179 | Airgap vertical transistor without structural collapse | Kangguo Cheng, Chanro Park, Ruilong Xie | 2023-04-25 |
| 11631617 | Scalable device for FINFET technology | Ruilong Xie, Kangguo Cheng, Chanro Park | 2023-04-18 |
| 11626287 | Semiconductor device with improved contact resistance and via connectivity | Chanro Park, Kangguo Cheng, Ruilong Xie | 2023-04-11 |
| 11594676 | Resistive random-access memory | Kangguo Cheng, Choonghyun Lee, Peng Xu | 2023-02-28 |
| 11588104 | Resistive memory with vertical transport transistor | Kangguo Cheng, Carl Radens, Ruilong Xie | 2023-02-21 |