Issued Patents 2023
Showing 1–25 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11848357 | Strained superlattice | Juntao Li, Shogo Mochizuki | 2023-12-19 |
| 11848384 | Semiconductor device with airgap spacer formation from backside of wafer | Ruilong Xie, Julien Frougier, Chanro Park | 2023-12-19 |
| 11843031 | Short gate on active and longer gate on STI for nanosheets | Chen Zhang, Wenyu Xu, Ruilong Xie | 2023-12-12 |
| 11837604 | Forming stacked nanosheet semiconductor devices with optimal crystalline orientations around devices | Shogo Mochizuki, Juntao Li | 2023-12-05 |
| 11830946 | Bottom source/drain for fin field effect transistors | Heng Wu, Shogo Mochizuki, Gen Tsutsui | 2023-11-28 |
| 11825757 | Memory device having a ring heater | — | 2023-11-21 |
| 11823956 | Two-dimensional vertical fins | — | 2023-11-21 |
| 11812675 | Filament confinement in resistive random access memory | Juntao Li, Dexin Kong, Zheng Xu | 2023-11-07 |
| 11805704 | Via interconnects for a magnetoresistive random-access memory device | Julien Frougier, Dimitri Houssameddine, Ruilong Xie | 2023-10-31 |
| 11798851 | Work function metal patterning for nanosheet CFETs | Ruilong Xie, Chen Zhang, Juntao Li | 2023-10-24 |
| 11798852 | Hybrid-channel nano-sheet FETs | Zhenxing Bi, Peng Xu, Wenyu Xu | 2023-10-24 |
| 11791396 | Field effect transistor with multiple gate dielectrics and dual work-functions with precisely controlled gate lengths | Ruilong Xie, Julien Frougier, Chanro Park | 2023-10-17 |
| 11791199 | Nanosheet IC device with single diffusion break | Ruilong Xie, Juntao Li, Carl Radens | 2023-10-17 |
| 11791342 | Varactor integrated with complementary metal-oxide semiconductor devices | Julien Frougier, Ruilong Xie, Juntao Li | 2023-10-17 |
| 11784125 | Wrap around cross-couple contact structure with enhanced gate contact size | Ruilong Xie, Chanro Park, Julien Frougier | 2023-10-10 |
| 11779918 | 3D nanochannel interleaved devices | Lawrence A. Clevenger, Donald F. Canaperi, Shawn P. Fetterolf | 2023-10-10 |
| 11784095 | Fabrication of a vertical fin field effect transistor with reduced dimensional variations | — | 2023-10-10 |
| 11776956 | III-V fins by aspect ratio trapping and self-aligned etch to remove rough epitaxy surface | Jeehwan Kim | 2023-10-03 |
| 11777275 | Augmented semiconductor lasers with spontaneous emissions blockage | Julien Frougier, Ruilong Xie, Chanro Park | 2023-10-03 |
| 11764259 | Vertical field-effect transistor with dielectric fin extension | Chen Zhang, Tenko Yamashita, Xin Miao, Wenyu Xu | 2023-09-19 |
| 11764265 | Nanosheet transistor with inner spacers | Ruilong Xie, Julien Frougier, Juntao Li | 2023-09-19 |
| 11756957 | Reducing gate resistance in stacked vertical transport field effect transistors | Heng Wu, Chen Zhang, Tenko Yamashita, Joshua M. Rubin | 2023-09-12 |
| 11738995 | Manipulation of a molecule using dipole moments | Lawrence A. Clevenger, Shawn P. Fetterolf, Donald F. Canaperi | 2023-08-29 |
| 11742836 | Random number generator using cross-coupled ring oscillators | Carl Radens | 2023-08-29 |
| 11735658 | Tunnel field-effect transistor with reduced subthreshold swing | Xin Miao, Chen Zhang, Wenyu Xu | 2023-08-22 |