Issued Patents 2023
Showing 51–74 of 74 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11646235 | Vertical tunneling field effect transistor with dual liner bottom spacer | Eric R. Miller, Marc A. Bergendahl, Sean Teehan, John R. Sporre | 2023-05-09 |
| 11637179 | Airgap vertical transistor without structural collapse | Chanro Park, Juntao Li, Ruilong Xie | 2023-04-25 |
| 11637238 | Resistive random-access memory cell and manufacturing method thereof | Chanro Park, Juntao Li, Ruilong Xie | 2023-04-25 |
| 11637041 | Method of forming high mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator | Xin Miao, Chen Zhang, Wenyu Xu | 2023-04-25 |
| 11631617 | Scalable device for FINFET technology | Ruilong Xie, Juntao Li, Chanro Park | 2023-04-18 |
| 11626322 | Interconnects with tight pitch and reduced resistance | — | 2023-04-11 |
| 11626287 | Semiconductor device with improved contact resistance and via connectivity | Chanro Park, Ruilong Xie, Juntao Li | 2023-04-11 |
| 11621348 | Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction | Chen Zhang, Xin Miao, Wenyu Xu | 2023-04-04 |
| 11615988 | FinFET devices | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2023-03-28 |
| 11615992 | Substrate isolated VTFET devices | Eric R. Miller, Marc A. Bergendahl, John R. Sporre, Gauri Karve, Fee Li Lie | 2023-03-28 |
| 11605409 | MTJ-based analog memory device | Dimitri Houssameddine, Julien Frougier, Ruilong Xie | 2023-03-14 |
| 11605672 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh | 2023-03-14 |
| 11594676 | Resistive random-access memory | Choonghyun Lee, Juntao Li, Peng Xu | 2023-02-28 |
| 11587978 | Phase change memory with improved recovery from element segregation | — | 2023-02-21 |
| 11588104 | Resistive memory with vertical transport transistor | Carl Radens, Ruilong Xie, Juntao Li | 2023-02-21 |
| 11581190 | Method of fabricating semiconductor fins by differentially oxidizing mandrel sidewalls | — | 2023-02-14 |
| 11574844 | Fabrication of a vertical fin field effect transistor with reduced dimensional variations | — | 2023-02-07 |
| 11575042 | Tunnel field-effect transistor with reduced subthreshold swing | Xin Miao, Chen Zhang, Wenyu Xu | 2023-02-07 |
| 11574811 | Tight pitch patterning | — | 2023-02-07 |
| 11569229 | Stacked vertical transport field effect transistors with anchors | Chen Zhang, Tenko Yamashita, Wenyu Xu, Fee Li Lie | 2023-01-31 |
| 11569366 | Fully depleted SOI transistor with a buried ferroelectric layer in back-gate | Shawn P. Fetterolf, Terence B. Hook | 2023-01-31 |
| 11569361 | Nanosheet transistors with wrap around contact | Julien Frougier, Ruilong Xie, Chanro Park | 2023-01-31 |
| 11557589 | Air gap spacer for metal gates | Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan | 2023-01-17 |
| 11545624 | Phase change memory cell resistive liner | Zuoguang Liu, Juntao Li, Ruilong Xie | 2023-01-03 |