| 11842998 |
Semiconductor device and method of forming the semiconductor device |
Robin Hsin Kuo Chao, Hemanth Jagannathan, Chun Wing Yeung, Jingyun Zhang |
2023-12-12 |
| 11830877 |
Co-integrated channel and gate formation scheme for nanosheet transistors having separately tuned threshold voltages |
Takashi Ando, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek |
2023-11-28 |
| 11784122 |
Integrated circuit device and method of manufacturing the same |
Joonyong Choe, Youngju Lee |
2023-10-10 |
| 11784096 |
Vertical transport field-effect transistors having germanium channel surfaces |
Pouya Hashemi, Takashi Ando |
2023-10-10 |
| 11756960 |
Multi-threshold voltage gate-all-around transistors |
Jingyun Zhang, Takashi Ando |
2023-09-12 |
| 11756996 |
Formation of wrap-around-contact for gate-all-around nanosheet FET |
Takashi Ando, Pouya Hashemi, Alexander Reznicek, Jingyun Zhang |
2023-09-12 |
| 11742409 |
Replacement-channel fabrication of III-V nanosheet devices |
Jingyun Zhang, Chun Wing Yeung, Robin Hsin Kuo Chao, Heng Wu |
2023-08-29 |
| 11682471 |
Dual damascene crossbar array for disabling a defective resistive switching device in the array |
Joseph F. Maniscalco, Oscar van der Straten, Koichi Motoyama, Seyoung Kim |
2023-06-20 |
| 11659780 |
Phase change memory structure with efficient heating system |
Injo Ok, Alexander Reznicek, Soon-Cheon Seo |
2023-05-23 |
| 11600593 |
Die bonding apparatus and method and substrate bonding apparatus and method |
Hanglim Lee, Jungsuk Goh, Kwangsup Kim, Doyeon KIM, Minyoung KIM +5 more |
2023-03-07 |
| 11594676 |
Resistive random-access memory |
Kangguo Cheng, Juntao Li, Peng Xu |
2023-02-28 |
| 11587837 |
Oxygen vacancy passivation in high-k dielectrics for vertical transport field effect transistor |
Takashi Ando, Alexander Reznicek, Jingyun Zhang |
2023-02-21 |
| 11588103 |
Resistive memory array |
Youngseok Kim, Timothy Mathew Philip, Soon-Cheon Seo, Injo Ok, Alexander Reznicek |
2023-02-21 |
