NL

Nicolas Loubet

IBM: 4 patents #602 of 6,852Top 9%
BS Bell Semiconductor: 3 patents #1 of 4Top 25%
CEA: 1 patents #138 of 554Top 25%
TE Tessera: 1 patents #22 of 63Top 35%
VG Vitesco Technologies Gmbh: 1 patents #28 of 147Top 20%
SS Stmicroelectronics Sa: 1 patents #27 of 83Top 35%
📍 Guilderland, NY: #2 of 14 inventorsTop 15%
🗺 New York: #193 of 11,993 inventorsTop 2%
Overall (2023): #7,901 of 537,848Top 2%
10
Patents 2023

Issued Patents 2023

Showing 1–10 of 10 patents

Patent #TitleCo-InventorsDate
11817502 Three-dimensional field effect device Huimei Zhou, Su Chen Fan, Shogo Mochizuki, Peng Xu 2023-11-14
11682715 Forming nanosheet transistor using sacrificial spacer and inner spacers Kangguo Cheng, Julien Frougier 2023-06-20
11670554 Method to co-integrate SiGe and Si channels for finFET devices Prasanna Khare, Qing Liu 2023-06-06
11639697 Method for controlling an internal combustion engine Yves Agnus, Henri Mouisse 2023-05-02
11610886 Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods Qing Liu, Prasanna Khare 2023-03-21
11605672 Steep-switch field effect transistor with integrated bi-stable resistive system Julien Frougier, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng 2023-03-14
11587928 Method to induce strain in finFET channels from an adjacent region Pierre Morin 2023-02-21
11575024 Forming gate last vertical FET with self-aligned spacers and junctions 2023-02-07
11575003 Creation of stress in the channel of a nanosheet transistor Tenko Yamashita, Guillaume Audoit, Nicolas Bernier, Remi Coquand, Shay Reboh 2023-02-07
11569384 Method to induce strain in 3-D microfabricated structures Pierre Morin 2023-01-31