Issued Patents 2023
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11847398 | Automatic generation of ground rule verification macros | Jingyu Lian, Shruthi Venkateshan, Jinning Liu | 2023-12-19 |
| 11769796 | Hybrid complementary metal-oxide semiconductor field effect transistor nanosheet device | Chen Zhang, Ruilong Xie | 2023-09-26 |
| 11764259 | Vertical field-effect transistor with dielectric fin extension | Chen Zhang, Xin Miao, Wenyu Xu, Kangguo Cheng | 2023-09-19 |
| 11757012 | Source and drain contact cut last process to enable wrap-around-contact | Andrew M. Greene, Dechao Guo, Veeraraghavan S. Basker, Robert R. Robison, Ardasheir Rahman | 2023-09-12 |
| 11756957 | Reducing gate resistance in stacked vertical transport field effect transistors | Heng Wu, Chen Zhang, Kangguo Cheng, Joshua M. Rubin | 2023-09-12 |
| 11744065 | Read-only memory for chip security that is MOSFET process compatible | Effendi Leobandung | 2023-08-29 |
| 11658062 | Air gap spacer formation for nano-scale semiconductor devices | Kangguo Cheng, Thomas J. Haigh, Jr., Juntao Li, Eric G. Liniger, Sanjay C. Mehta +2 more | 2023-05-23 |
| 11652006 | FinFET complementary metal-oxide-semiconductor (CMOS) devices | Chen Zhang, Teresa J. Wu | 2023-05-16 |
| 11575003 | Creation of stress in the channel of a nanosheet transistor | Nicolas Loubet, Guillaume Audoit, Nicolas Bernier, Remi Coquand, Shay Reboh | 2023-02-07 |
| 11569229 | Stacked vertical transport field effect transistors with anchors | Chen Zhang, Kangguo Cheng, Wenyu Xu, Fee Li Lie | 2023-01-31 |
| 11563003 | Fin top hard mask formation after wafer flipping process | Chen Zhang, Joshua M. Rubin, Brent A. Anderson | 2023-01-24 |
| 11562906 | Low resistance source drain contact formation with trench metastable alloys and laser annealing | Oleg Gluschenkov, Zuoguang Liu, Shogo Mochizuki, Hiroaki Niimi, Chun-Chen Yeh | 2023-01-24 |
| 11545499 | Read-only memory with vertical transistors | — | 2023-01-03 |