Issued Patents 2023
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11830824 | Edge protection on semiconductor substrates | Amirhasan Nourbakhsh, Joseph F. Salfelder, Ki Cheol Ahn, Tyler Sherwood, Siddarth A. Krishnan +2 more | 2023-11-28 |
| 11772507 | Energy facility leveraging electric vehicle charging to increase usage of renewable energy | Michael W. Degner | 2023-10-03 |
| 11769665 | Power device structures and methods of making | Amirhasan Nourbakhsh, Raman Gaire, Tyler Sherwood, Roger QUON, Siddarth A. Krishnan | 2023-09-26 |
| 11749744 | Fin structure for vertical transport field effect transistor | Heng Wu, Dechao Guo, Junli Wang, Ruqiang Bao, Ruilong Xie | 2023-09-05 |
| 11715794 | VTFET with cell height constraints | Heng Wu, Ruilong Xie, Alexander Reznicek, Junli Wang | 2023-08-01 |
| 11710521 | Static random-access memory cell design | Junli Wang, Heng Wu, Ruqiang Bao, Dechao Guo | 2023-07-25 |
| 11705504 | Stacked nanosheet transistor with defect free channel | Kangguo Cheng, Heng Wu, Chen Zhang | 2023-07-18 |
| 11705490 | Graded doping in power devices | Ashish Pal, El Mehdi Bazizi, Siddarth A. Krishnan, Xing Chen, Tyler Sherwood | 2023-07-18 |
| 11616140 | Vertical transport field effect transistor with bottom source/drain | Heng Wu, Gen Tsutsui, Ruilong Xie | 2023-03-28 |
| 11615842 | Mixed conducting volatile memory element for accelerated writing of nonvolatile memristive device | Kevin W. Brew, Wei Wang, Injo Ok, Youngseok Kim | 2023-03-28 |
| 11605741 | Methods of forming doped silicide power devices | Joshua S. Holt, Tyler Sherwood, Archana Kumar, Nicolas L. Breil, Siddarth A. Krishnan | 2023-03-14 |
| 11586067 | Structure and method of advanced LCoS back-plane having robust pixel via metallization | Benjamin D. Briggs, Tyler Sherwood, Raghav Sreenivasan | 2023-02-21 |
| 11573452 | Method for LCoS DBR multilayer stack protection via sacrificial hardmask for RIE and CMP processes | Benjamin D. Briggs, Tyler Sherwood, Raghav Sreenivasan | 2023-02-07 |
| 11557651 | Nanosheet transistors with inner airgaps | Heng Wu, Ruilong Xie, Alexander Reznicek | 2023-01-17 |