| 11854884 |
Fully aligned top vias |
Nicholas Anthony Lanzillo, Koichi Motoyama, Somnath Ghosh, Robert R. Robison, Lawrence A. Clevenger |
2023-12-26 |
| 11823998 |
Top via with next level line selective growth |
Brent A. Anderson, Lawrence A. Clevenger, Nicholas Anthony Lanzillo, Kisik Choi, Robert R. Robison |
2023-11-21 |
| 11804406 |
Top via cut fill process for line extension reduction |
Brent A. Anderson, Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-10-31 |
| 11791258 |
Conductive lines with subtractive cuts |
Brent A. Anderson, Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-10-17 |
| 11735524 |
Electrical device having conductive lines with air gaps therebetween and interconnects without exclusion zones |
Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo |
2023-08-22 |
| 11676854 |
Selective ILD deposition for fully aligned via with airgap |
Benjamin D. Briggs, Huai Huang, Lawrence A. Clevenger, Michael Rizzolo, Hosadurga Shobha |
2023-06-13 |
| 11670542 |
Stepped top via for via resistance reduction |
Brent A. Anderson, Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-06-06 |
| 11670510 |
Self aligned pattern formation post spacer etchback in tight pitch configurations |
Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson Felix, Sivananda K. Kanakasabapathy +2 more |
2023-06-06 |
| 11646221 |
Self-aligned pattern formation for a semiconductor device |
Sean D. Burns, Lawrence A. Clevenger, Nelson Felix, Sivananda K. Kanakasabapathy, Nicole Saulnier |
2023-05-09 |
| 11621189 |
Barrier-less prefilled via formation |
Nicholas Anthony Lanzillo, Hosadurga Shobha, Junli Wang, Lawrence A. Clevenger, Robert R. Robison +1 more |
2023-04-04 |
| 11600565 |
Top via stack |
Brent A. Anderson, Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Robert R. Robison |
2023-03-07 |
| 11587830 |
Self-forming barrier for use in air gap formation |
Benjamin D. Briggs, Elbert E. Huang, Takeshi Nogami |
2023-02-21 |
| 11574864 |
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device |
Benjamin D. Briggs, Lawrence A. Clevenger, Bartlet H. DeProspo, Huai Huang, Michael Rizzolo |
2023-02-07 |
