Issued Patents 2022
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11482622 | Adhesion structure for thin film transistor | Kevin Lin, Abhishek A. Sharma, Carl Naylor, Urusa Alaan, Christopher J. Jezewski | 2022-10-25 |
| 11476164 | Integrated circuit structures having differentiated workfunction layers | Ying-Feng PANG, Florian Gstrein, Dan S. LAVRIC, Robert Niffenegger, Padmanava Sadhukhan +2 more | 2022-10-18 |
| 11462568 | Stacked thin film transistors | Aaron D. Lilak, Justin R. Weber, Harold W. Kennel, Willy Rachmady, Gilbert Dewey +3 more | 2022-10-04 |
| 11450739 | Germanium-rich nanowire transistor with relaxed buffer layer | Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more | 2022-09-20 |
| 11450527 | Engineering tensile strain buffer in art for high quality Ge channel | Van H. Le, Benjamin Chu-Kung, Willy Rachmady, Marc C. French, Seung Hoon Sung +2 more | 2022-09-20 |
| 11437472 | Integrated circuit structures having germanium-based channels | Siddharth Chouksey, Glenn A. Glass, Anand S. Murthy, Harold W. Kennel, Jack T. Kavalieros +2 more | 2022-09-06 |
| 11404562 | Tunneling field effect transistors | Cheng-Ying Huang, Willy Rachmady, Matthew V. Metz, Benjamin Chu-Kung, Uygar E. Avci +2 more | 2022-08-02 |
| 11335793 | Vertical tunneling field-effect transistors | Cheng-Ying Huang, Jack T. Kavalieros, Ian A. Young, Matthew V. Metz, Willy Rachmady +2 more | 2022-05-17 |
| 11328988 | Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication | Gilbert Dewey, Ryan Keech, Cory Bomberger, Cheng-Ying Huang, Willy Rachmady +1 more | 2022-05-10 |
| 11322620 | Metal-assisted single crystal transistors | Van H. Le, Seung Hoon Sung, Abhishek A. Sharma, Ravi Pillarisetty | 2022-05-03 |
| 11276644 | Integrated circuits and methods for forming thin film crystal layers | Carl Naylor, Kevin Lin, Abhishek A. Sharma, Mauro J. Kobrinsky, Christopher J. Jezewski +1 more | 2022-03-15 |
| 11244943 | Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material | Cheng-Ying Huang, Gilbert Dewey, Kimin Jun, Willy Rachmady, Zachary Geiger +5 more | 2022-02-08 |
| 11233148 | Reducing band-to-band tunneling in semiconductor devices | Benjamin Chu-Kung, Jack T. Kavalieros, Seung Hoon Sung, Siddharth Chouksey, Harold W. Kennel +4 more | 2022-01-25 |