Issued Patents 2020
Showing 1–25 of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10879365 | Transistors with non-vertical gates | Cheng-Ying Huang, Sean T. Ma, Willy Rachmady, Gilbert Dewey, Matthew V. Metz +3 more | 2020-12-29 |
| 10879353 | Selective germanium P-contact metalization through trench | Glenn A. Glass, Tahir Ghani | 2020-12-29 |
| 10879241 | Techniques for controlling transistor sub-fin leakage | Glenn A. Glass, Prashant Majhi, Tahir Ghani, Daniel B. Aubertine, Heidi M. Meyer +2 more | 2020-12-29 |
| 10854752 | High mobility strained channels for fin-based NMOS transistors | Stephen M. Cea, Roza Kotlyar, Harold W. Kennel, Glenn A. Glass, Willy Rachmady +1 more | 2020-12-01 |
| 10818793 | Indium-rich NMOS transistor channels | Chandra S. Mohapatra, Glenn A. Glass, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros +3 more | 2020-10-27 |
| 10811496 | Transistor devices having source/drain structure configured with high germanium content portion | Glenn A. Glass | 2020-10-20 |
| 10804357 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Mark Armstrong, Rafael Rios +2 more | 2020-10-13 |
| 10797150 | Differential work function between gate stack metals to reduce parasitic capacitance | Sean T. Ma, Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Gilbert Dewey +3 more | 2020-10-06 |
| 10770593 | Beaded fin transistor | Gilbert Dewey, Tahir Ghani, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz +1 more | 2020-09-08 |
| 10755984 | Replacement channel etch for high quality interface | Glenn A. Glass, Ying-Feng PANG, Nabil G. Mistkawi, Tahir Ghani, Huang-Lin Chao | 2020-08-25 |
| 10749032 | Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers | Chandra S. Mohapatra, Glenn A. Glass, Karthik Jambunathan, Willy Rachmady, Gilbert Dewey +2 more | 2020-08-18 |
| 10748900 | Fin-based III-V/SI or GE CMOS SAGE integration | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Jack T. Kavalieros +1 more | 2020-08-18 |
| 10734412 | Backside contact resistance reduction for semiconductor devices with metallization on both sides | Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Mauro J. Kobrinsky, Patrick Morrow | 2020-08-04 |
| 10700178 | Contact resistance reduction employing germanium overlayer pre-contact metalization | Glenn A. Glass, Tahir Ghani | 2020-06-30 |
| 10692973 | Germanium-rich channel transistors including one or more dopant diffusion barrier elements | Glenn A. Glass, Karthik Jambunathan, Benjamin Chu-Kung, Seung Hoon Sung, Jack T. Kavalieros +2 more | 2020-06-23 |
| 10692974 | Deuterium-based passivation of non-planar transistor interfaces | Prashant Majhi, Glenn A. Glass, Tahir Ghani, Aravind S. Killampalli, Mark R. Brazier +1 more | 2020-06-23 |
| 10672868 | Methods of forming self aligned spacers for nanowire device structures | Karthik Jambunathan, Glenn A. Glass, Jun Sung Kang, Seiyon Kim | 2020-06-02 |
| 10651288 | Pseudomorphic InGaAs on GaAs for gate-all-around transistors | Chandra S. Mohapatra, Glenn A. Glass, Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros +2 more | 2020-05-12 |
| 10644137 | III-V finfet transistor with V-groove S/D profile for improved access resistance | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Sean T. Ma, Chandra S. Mohapatra +3 more | 2020-05-05 |
| 10644112 | Systems, methods and devices for isolation for subfin leakage | Benjamin Chu-Kung, Van H. Le, Seung Hoon Sung, Jack T. Kavalieros, Ashish Agrawal +5 more | 2020-05-05 |
| 10636912 | FINFET transistor having a tapered subfin structure | Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Jack T. Kavalieros, Chandra S. Mohapatra +2 more | 2020-04-28 |
| 10586848 | Apparatus and methods to create an active channel having indium rich side and bottom surfaces | Chandra S. Mohapatra, Glenn A. Glass, Matthew V. Metz, Willy Rachmady, Gilbert Dewey +2 more | 2020-03-10 |
| 10580860 | Integration methods to fabricate internal spacers for nanowire devices | Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Mark Armstrong, Rafael Rios +2 more | 2020-03-03 |
| 10580865 | Transistor with a sub-fin dielectric region under a gate | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Nadia M. Rahhal-Orabi +2 more | 2020-03-03 |
| 10573750 | Methods of forming doped source/drain contacts and structures formed thereby | Glenn A. Glass, Karthik Jambunathan, Chandra S. Mohapatra, Seiyon Kim | 2020-02-25 |