Issued Patents 2020
Showing 76–100 of 141 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10692991 | Gate-all-around field effect transistors with air-gap inner spacers and methods | Daniel Chanemougame, Julien Frougier | 2020-06-23 |
| 10685874 | Self-aligned cuts in an interconnect structure | Hui Zang, Lei Sun, Lars Liebmann, Daniel Chanemougame, Guillaume Bouche | 2020-06-16 |
| 10685872 | Electrically isolated contacts in an active region of a semiconductor device | Kangguo Cheng, Peng Xu, Ekmini Anuja De Silva | 2020-06-16 |
| 10679906 | Method of forming nanosheet transistor structures with reduced parasitic capacitance and improved junction sharpness | Kangguo Cheng, Chanro Park, Tenko Yamashita | 2020-06-09 |
| 10680081 | Vertical transistors with improved top source/drain junctions | Kangguo Cheng, Muthumanickam Sankarapandian, Tenko Yamashita, Chun-Chen Yeh | 2020-06-09 |
| 10680064 | Techniques for VFET top source/drain epitaxy | Kangguo Cheng, Cheng Chi, Chi-Chun Liu, Tenko Yamashita, Chun-Chen Yeh | 2020-06-09 |
| 10679894 | Airgap spacers formed in conjunction with a late gate cut | Julien Frougier, Chanro Park, Kangguo Cheng | 2020-06-09 |
| 10665586 | Method of concurrently forming source/drain and gate contacts and related device | Cheng Chi | 2020-05-26 |
| 10665692 | Non-self aligned gate contacts formed over the active region of a transistor | Chanro Park, Kangguo Cheng, Julien Frougier | 2020-05-26 |
| 10665669 | Insulative structure with diffusion break integral with isolation layer and methods to form same | Julien Frougier | 2020-05-26 |
| 10665590 | Wrap-around contact surrounding epitaxial regions of integrated circuit structures and method of forming same | William J. Taylor, Jr., Hui Zang | 2020-05-26 |
| 10665505 | Self-aligned gate contact isolation | Kangguo Cheng, Peng Xu, Ekmini Anuja De Silva | 2020-05-26 |
| 10658459 | Nanosheet transistor with robust source/drain isolation from substrate | Robin Hsin Kuo Chao, Kangguo Cheng, Cheng Chi, John H. Zhang | 2020-05-19 |
| 10658243 | Method for forming replacement metal gate and related structures | Daniel Chanemougame, Steven R. Soss, Steven Bentley, Chanro Park | 2020-05-19 |
| 10651284 | Methods of forming gate contact structures and cross-coupled contact structures for transistor devices | Youngtag Woo, Daniel Chanemougame, Bipul C. Paul, Lars Liebmann, Heimanu Niebojewski +3 more | 2020-05-12 |
| 10651291 | Inner spacer formation in a nanosheet field-effect transistor | Julien Frougier | 2020-05-12 |
| 10651173 | Single diffusion cut for gate structures | Guowei Xu, Hui Zang, Haiting Wang | 2020-05-12 |
| 10644157 | Fin-type field effect transistors with uniform channel lengths and below-channel isolation on bulk semiconductor substrates and methods | Julien Frougier, Andreas Knorr, Srikanth B. Samavedam | 2020-05-05 |
| 10643845 | Repaired mask structures and resultant underlying patterned structures | Xunyuan Zhang, Yi Qi | 2020-05-05 |
| 10636890 | Chamfered replacement gate structures | Haiting Wang, Rongtao Lu, Chih-Chiang Chang, Guowei Xu, Hui Zang +1 more | 2020-04-28 |
| 10636694 | Dielectric isolation in gate-all-around devices | Robin Hsin Kuo Chao, Kangguo Cheng, Nicolas Loubet, Pietro Montanini | 2020-04-28 |
| 10629516 | Hybrid dual damascene structures with enlarged contacts | Daniel Chanemougame, Julien Frougier | 2020-04-21 |
| 10629743 | Semiconductor structure including low-K spacer material | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2020-04-21 |
| 10629739 | Methods of forming spacers adjacent gate structures of a transistor device | Hui Zang, Chung Foong Tan, Guowei Xu, Haiting Wang, Yue Zhong +2 more | 2020-04-21 |
| 10629707 | FinFET structure with bulbous upper insulative cap portion to protect gate height, and related method | Hui Zang, Jiehui Shu | 2020-04-21 |