| 9793405 |
Semiconductor lateral sidewall growth from a semiconductor pillar |
Cheng-Wei Cheng, Sanghoon Lee, Effendi Leobandung, Yanning Sun |
2017-10-17 |
| 9793398 |
Fabrication of a strained region on a substrate |
Isaac Lauer, Jiaxing Liu |
2017-10-17 |
| 9773903 |
Asymmetric III-V MOSFET on silicon substrate |
Cheng-Wei Cheng, Pranita Kerber, Effendi Leobandung, Amlan Majumdar, Yanning Sun |
2017-09-26 |
| 9768195 |
Semiconductor structure with integrated passive structures |
Anthony I. Chou, Arvind Kumar, Shreesh Narasimha |
2017-09-19 |
| 9739728 |
Automatic defect detection and classification for high throughput electron channeling contrast imaging |
Stephen W. Bedell, Kunal Mukherjee, John A. Ott, Devendra K. Sadana, Brent A. Wacaser |
2017-08-22 |
| 9698159 |
Semiconductor structure with integrated passive structures |
Anthony I. Chou, Arvind Kumar, Shreesh Narasimha |
2017-07-04 |
| 9698239 |
Growing groups III-V lateral nanowire channels |
Sanghoon Lee, Effendi Leobandung, Brent A. Wacaser |
2017-07-04 |
| 9680018 |
Method of forming high-germanium content silicon germanium alloy fins on insulator |
Pouya Hashemi, John A. Ott, Alexander Reznicek |
2017-06-13 |
| 9659961 |
Semiconductor structure with integrated passive structures |
Anthony I. Chou, Arvind Kumar, Shreesh Narasimha |
2017-05-23 |
| 9627271 |
III-V compound semiconductor channel material formation on mandrel after middle-of-the-line dielectric formation |
Effendi Leobandung |
2017-04-18 |
| 9627266 |
Dual-semiconductor complementary metal-oxide-semiconductor device |
Sanghoon Lee, Effendi Leobandung, Yanning Sun |
2017-04-18 |
| 9553166 |
Asymmetric III-V MOSFET on silicon substrate |
Cheng-Wei Cheng, Pranita Kerber, Effendi Leobandung, Amlan Majumdar, Yanning Sun |
2017-01-24 |
| 9536985 |
Epitaxial growth of material on source/drain regions of FinFET structure |
Michael P. Chudzik, Brian J. Greene, Eric C. Harley, Judson R. Holt, Yue Ke +2 more |
2017-01-03 |
