Issued Patents 2016
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9349798 | CMOS structures with selective tensile strained NFET fins and relaxed PFET fins | Bruce B. Doris, Ali Khakifirooz, Joshua M. Rubin | 2016-05-24 |
| 9331148 | FinFET device with channel strain | Bruce B. Doris, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie | 2016-05-03 |
| 9331073 | Epitaxially grown quantum well finFETs for enhanced pFET performance | Marc A. Bergendahl, James J. Demarest, Seth L. Knupp, Raghavasimhan Sreenivasan, Sean Teehan +2 more | 2016-05-03 |
| 9324830 | Self-aligned contact process enabled by low temperature | Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2016-04-26 |
| 9312367 | FinFET with a silicon germanium alloy channel and method of fabrication thereof | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-04-12 |
| 9293345 | Sidewall image transfer with a spin-on hardmask | Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2016-03-22 |
| 9293588 | FinFET with a silicon germanium alloy channel and method of fabrication thereof | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-03-22 |
| 9287135 | Sidewall image transfer process for fin patterning | Bruce B. Doris, Sivananda K. Kanakasabapathy, Alexander Reznicek | 2016-03-15 |
| 9276013 | Integrated formation of Si and SiGe fins | Bruce B. Doris, Juntao Li, Junli Wang, Chih-Chao Yang | 2016-03-01 |
| 9269575 | Trench sidewall protection for selective epitaxial semiconductor material formation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-02-23 |
| 9252243 | Gate structure integration scheme for fin field effect transistors | Chiahsun Tseng, Chun-Chen Yeh, Yunpeng Yin | 2016-02-02 |
| 9252014 | Trench sidewall protection for selective epitaxial semiconductor material formation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2016-02-02 |