HT

Hun-Jan Tao

TSMC: 12 patents #12 of 614Top 2%
Overall (2002): #1,108 of 266,432Top 1%
12
Patents 2002

Issued Patents 2002

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDate
6500727 Silicon shallow trench etching with round top corner by photoresist-free process Cheng-Ku Chen, Fang Chen 2002-12-31
6498067 Integrated approach for controlling top dielectric loss during spacer etching Baw-Ching Perng, Ming-Huang Tsai, Ju-Wang Hsu 2002-12-24
6497993 In situ dry etching procedure to form a borderless contact hole Yuan-Hunh Chiu, Chia-Shiung Tsai, Chu-Yun Fu 2002-12-24
6479403 Method to pattern polysilicon gates with high-k material gate dielectric Ming-Huan Tsei, Baw-Ching Perng 2002-11-12
6472335 Methods of adhesion promoter between low-K layer and underlying insulating layer Chia-Shiung Tsai, Yao-Yi Cheng 2002-10-29
6444566 Method of making borderless contact having a sion buffer layer Ming-Huan Tsai, Jyh-Huei Chen, Chu-Yun Fu 2002-09-03
6440863 Plasma etch method for forming patterned oxygen containing plasma etchable layer Chia-Shiun Tsai, Chao-Cheng Chen 2002-08-27
6436841 Selectivity oxide-to-oxynitride etch process using a fluorine containing gas, an inert gas and a weak oxidant Ming-Huan Tsai, Bao-Ching Pen, Mei-Ru Kuo 2002-08-20
6410424 Process flow to optimize profile of ultra small size photo resist free contact Ming-Huan Tsai, Chung-Long Chang, Chii-Ming Wu 2002-06-25
6407002 Partial resist free approach in contact etch to improve W-filling Li-Te Lin, Yuan-Hung Chiu, Ming-Huan Tsai 2002-06-18
6399483 Method for improving faceting effect in dual damascene process Jen-Cheng Liu, Ming-Huei Lui, Chia-Shiung Tsai 2002-06-04
6399515 Plasma etch method for forming patterned chlorine containing plasma etchable silicon containing layer with enhanced sidewall profile uniformity Chia-Shiung Tsai 2002-06-04