Issued Patents 2002
Showing 1–25 of 33 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6489233 | Non-metallic barrier formations for copper damascene type interconnects | Subhash Gupta, Mei Sheng Zhou, Sangki Hong | 2002-12-03 |
| 6486080 | Method to form zirconium oxide and hafnium oxide for high dielectric constant materials | Wenhe Lin, Mei Sheng Zhou | 2002-11-26 |
| 6479383 | Method for selective removal of unreacted metal after silicidation | Mei Sheng Zhou | 2002-11-12 |
| 6475908 | Dual metal gate process: metals and their silicides | Wenhe Lin, Mei Sheng Zhou, Kin Leong Pey | 2002-11-05 |
| 6475810 | Method of manufacturing embedded organic stop layer for dual damascene patterning | Mei Sheng Zhou, John Sudijono, Subhash Gupta, Sudipto Ranendra Roy, Paul Ho +2 more | 2002-11-05 |
| 6465888 | Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene | Subhash Gupta, Mei Sheng Zhou, Sang-Ki Hong | 2002-10-15 |
| 6458695 | Methods to form dual metal gates by incorporating metals and their conductive oxides | Wenhe Lin, Mei Sheng Zhou, Kin Leong Pey | 2002-10-01 |
| 6436824 | Low dielectric constant materials for copper damascene | Mei Sheng Zhou, Yi Xu | 2002-08-20 |
| 6429122 | Non metallic barrier formations for copper damascene type interconnects | Subhash Gupta, Mei Sheng Zhou, Sangki Hong | 2002-08-06 |
| 6429129 | Method of using silicon rich carbide as a barrier material for fluorinated materials | Licheng M. Han, Xu Yi, Mei Sheng Zhou, Joseph Xie | 2002-08-06 |
| 6429117 | Method to create copper traps by modifying treatment on the dielectrics surface | John Sudijono, Yakub Aliyu, Mei Sheng Zhou, Subhash Gupta, Sudipto Ranendra Roy +2 more | 2002-08-06 |
| 6424044 | Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallization | Licheng M. Han, Xu Yi, Joseph Xie, Mei Sheng Zhou | 2002-07-23 |
| 6419754 | Endpoint detection and novel chemicals in copper stripping | Mei Sheng Zhou | 2002-07-16 |
| 6415973 | Method of application of copper solution in flip-chip, COB, and micrometal bonding | Kwok Keung Paul Ho, Yi Xu, Mei Sheng Zhou, Yakub Aliyu, John Sudijono +2 more | 2002-07-09 |
| 6417088 | Method of application of displacement reaction to form a conductive cap layer for flip-chip, COB, and micro metal bonding | Kwok Keung Paul Ho, Yi Xu, Yakub Aliyu, Mei Sheng Zhou, John Sudijono +2 more | 2002-07-09 |
| 6394114 | Method for stripping copper in damascene interconnects | Subhash Gupta, Paul Ho, Mei Sheng Zhou | 2002-05-28 |
| 6391783 | Method to thin down copper barriers in deep submicron geometries by using alkaline earth element, barrier additives, or self assembly technique | John Sudijono, Yakub Aliyu, Mei Sheng Zhou, Subhash Gupta, Sudipto Ranendra Roy +2 more | 2002-05-21 |
| 6387765 | Method for forming an extended metal gate using a damascene process | Vijai Kumar Chhagan, Yelehanka Ramachandramurthy Pradeep, Mei Sheng Zhou, Henry Gerung | 2002-05-14 |
| 6378759 | Method of application of conductive cap-layer in flip-chip, COB, and micro metal bonding | Kwok Keung Paul Ho, Yi Xu, Yakub Aliyu, Mei Sheng Zhou, John Sudijono +2 more | 2002-04-30 |
| 6376361 | Method to remove excess metal in the formation of damascene and dual interconnects | Mei Sheng Zhou, Tak Yan Tse | 2002-04-23 |
| 6376353 | Aluminum and copper bimetallic bond pad scheme for copper damascene interconnects | Mei Sheng Zhou, Sangki Hong | 2002-04-23 |
| 6372636 | Composite silicon-metal nitride barrier to prevent formation of metal fluorides in copper damascene | Subhash Gupta, Mei Sheng Zhou, Sangki Hong | 2002-04-16 |
| 6368958 | Method to deposit a cooper seed layer for dual damascence interconnects | Paul Ho, Subhash Gupta, Mei Sheng Zhou | 2002-04-09 |
| 6365508 | Process without post-etch cleaning-converting polymer and by-products into an inert layer | Mei Sheng Zhou, John Sudijono, Subhash Gupta, Sudipto Ranendra Roy, Paul Ho +2 more | 2002-04-02 |
| 6358842 | Method to form damascene interconnects with sidewall passivation to protect organic dielectrics | Mei Sheng Zhou, Yi Xu | 2002-03-19 |