Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10504698 | Plasma processing apparatus | Ryou Son, Naoki Matsumoto, Jun Yoshikawa, Michitaka Aita, Ippei Shimizu +4 more | 2019-12-10 |
| 10312057 | Plasma processing apparatus | Yusuke Yoshida, Naoki Matsumoto, Ippei Shimizu, Naoki Mihara, Jun Yoshikawa +3 more | 2019-06-04 |
| 9412607 | Plasma etching method | Tomiko Kamada, Akinori Kitamura, Hiroto Ohtake, Yutaka Osada, Yuji Otsuka +2 more | 2016-08-09 |
| 9412565 | Temperature measuring method and plasma processing system | Yusuke Yoshida, Ryou Son, Takahiro Senda, Naoki Matsumoto | 2016-08-09 |
| 8569186 | Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device | Tatsuo Nishita, Toshio Nakanishi | 2013-10-29 |
| 8366953 | Plasma cleaning method and plasma CVD method | Tatsuo Nishita, Toshio Nakanishi | 2013-02-05 |
| 8329596 | Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device | Tatsuo Nishita, Toshio Nakanishi | 2012-12-11 |
| 8318614 | Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus | Tatsuo Nishita, Toshio Nakanishi, Yoshihiro Hirota | 2012-11-27 |
| 8258571 | MOS semiconductor memory device having charge storage region formed from stack of insulating films | Tetsuo Endoh, Tatsuo Nishita, Minoru Honda, Toshio Nakanishi, Yoshihiro Hirota | 2012-09-04 |
| 8138103 | Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device | Tatsuo Nishita, Toshio Nakanishi | 2012-03-20 |
| 8124484 | Forming a MOS memory device having a dielectric film laminate as a charge accumulation region | Tetsuo Endoh, Syuichiro Otao, Minoru Honda, Toshio Nakanishi | 2012-02-28 |
| 8119545 | Forming a silicon nitride film by plasma CVD | Minoru Honda, Toshio Nakanishi, Tatsuo Nishita, Junya Miyahara | 2012-02-21 |
| 8114790 | Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing method, and plasma CVD apparatus | Tatsuo Nishita, Toshio Nakanishi | 2012-02-14 |
| 7771796 | Plasma processing method and film forming method | Masaru Sasaki | 2010-08-10 |
| 7763551 | RLSA CVD deposition control using halogen gas for hydrogen scavenging | Jozef Brcka, Song yun Kang, Toshio Nakanishi, Peter L. G. Ventzek, Minoru Honda | 2010-07-27 |