Issued Patents All Time
Showing 76–100 of 130 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7291527 | Work function control of metals | James Joseph Chambers, Mark Visokay, Antonio Luis Pacheco Rotondaro | 2007-11-06 |
| 7233035 | Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound | Antonio Luis Pacheco Rotondaro, Mark Visokay | 2007-06-19 |
| 7229873 | Process for manufacturing dual work function metal gates in a microelectronics device | James Joseph Chambers, Mark Visokay | 2007-06-12 |
| 7226826 | Semiconductor device having multiple work functions and method of manufacture therefor | Husam N. Alshareef, Mark Visokay, Antonio Luis Pacheco Rotondaro | 2007-06-05 |
| 7226830 | Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS dielectric formation | James Joseph Chambers, Mark Visokay | 2007-06-05 |
| 7183221 | Method of fabricating a semiconductor having dual gate electrodes using a composition-altered metal layer | Mark Visokay | 2007-02-27 |
| 7176076 | Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials | James Joseph Chambers, Mark Visokay | 2007-02-13 |
| 7163877 | Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing | Hiroaki Niimi, Koji Shimomura, Takuya Sugawara, Tatsuo Matsudo | 2007-01-16 |
| 7148546 | MOS transistor gates with doped silicide and methods for making the same | Mark Visokay | 2006-12-12 |
| 7135361 | Method for fabricating transistor gate structures and gate dielectrics thereof | Mark Visokay, James Joseph Chambers, Antonio Luis Pacheco Rotondaro, Haowen Bu | 2006-11-14 |
| 7115530 | Top surface roughness reduction of high-k dielectric materials using plasma based processes | Manuel Quevedo-Lopez, James Joseph Chambers, Mark Visokay | 2006-10-03 |
| 7109077 | Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound | Antonio Luis Pacheco Rotondaro, Mark Visokay | 2006-09-19 |
| 7105891 | Gate structure and method | Mark Visokay, Antonio Rotondaro | 2006-09-12 |
| 7098516 | Refractory metal-based electrodes for work function setting in semiconductor devices | James Joseph Chambers, Mark Visokay | 2006-08-29 |
| 7091119 | Encapsulated MOS transistor gate structures and methods for making the same | — | 2006-08-15 |
| 7071519 | Control of high-k gate dielectric film composition profile for property optimization | Mark Visokay, James Joseph Chambers, Antonio Luis Pacheco Rotondaro | 2006-07-04 |
| 7067434 | Hydrogen free integration of high-k gate dielectrics | James Joseph Chambers, Mark Visokay | 2006-06-27 |
| 7045456 | MOS transistor gates with thin lower metal silicide and methods for making the same | Robert William Murto, Mark Visokay | 2006-05-16 |
| 7045431 | Method for integrating high-k dielectrics in transistor devices | Antonio Rotondaro, Douglas E. Mercer, Mark Visokay, Haowen Bu, Malcolm J. Bevan | 2006-05-16 |
| 7018902 | Gate dielectric and method | Mark Visokay, Antonio Rotondaro | 2006-03-28 |
| 7015088 | High-K gate dielectric defect gettering using dopants | James Joseph Chambers, Antonio Luis Pacheco Rotondaro | 2006-03-21 |
| 7015534 | Encapsulated MOS transistor gate structures and methods for making the same | — | 2006-03-21 |
| 6979623 | Method for fabricating split gate transistor device having high-k dielectrics | Antonio Luis Pacheco Rotondaro, Mark Visokay, James Joseph Chambers | 2005-12-27 |
| 6936508 | Metal gate MOS transistors and methods for making the same | Mark Visokay, James Joseph Chambers | 2005-08-30 |
| 6919251 | Gate dielectric and method | Antonio Rotondaro, Malcolm J. Bevan | 2005-07-19 |