Issued Patents All Time
Showing 51–75 of 130 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8309438 | Synthesizing graphene from metal-carbon solutions using ion implantation | Robert M. Wallace, Rodney S. Ruoff | 2012-11-13 |
| 8198184 | Method to maximize nitrogen concentration at the top surface of gate dielectrics | James Joseph Chambers, Hiroaki Niimi | 2012-06-12 |
| 8198707 | Establishing a uniformly thin dielectric layer on graphene in a semiconductor device without affecting the properties of graphene | Sanjay Banerjee, Seyoung Kim, Emanuel Tutuc | 2012-06-12 |
| 8143212 | Dalbavancin compositions for treatment of bacterial infections | Martin Stogniew, Romeo Ciabatti | 2012-03-27 |
| 8124529 | Semiconductor device fabricated using a metal microstructure control process | James Joseph Chambers, Mark Visokay | 2012-02-28 |
| 8021990 | Gate structure and method | Antonio Rotondaro, Mark Visokay, Rajesh Khamankar, Douglas E. Mercer | 2011-09-20 |
| 7842567 | Dual work function CMOS devices utilizing carbide based electrodes | James Joseph Chambers, Mark Visokay | 2010-11-30 |
| 7799668 | Formation of uniform silicate gate dielectrics | Hiroaki Niimi, James Joseph Chambers | 2010-09-21 |
| 7642146 | Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials | James Joseph Chambers, Mark Visokay | 2010-01-05 |
| 7612422 | Structure for dual work function metal gate electrodes by control of interface dipoles | James Joseph Chambers, Mark Visokay | 2009-11-03 |
| 7601577 | Work function control of metals | James Joseph Chambers, Mark Visokay, Antonio Luis Pacheco Rotondaro | 2009-10-13 |
| 7601578 | Defect control in gate dielectrics | James Joseph Chambers, Mark Visokay, Antonio Luis Pacheco Rotondaro | 2009-10-13 |
| 7535066 | Gate structure and method | Antonio Rotondaro, Mark Visokay, Rajesh Khamankar, Douglas E. Mercer | 2009-05-19 |
| 7531400 | Methods for fabricating MOS transistor gates with doped silicide | Mark Visokay | 2009-05-12 |
| 7528024 | Dual work function metal gate integration in semiconductor devices | James Joseph Chambers, Mark Visokay | 2009-05-05 |
| 7470577 | Dual work function CMOS devices utilizing carbide based electrodes | James Joseph Chambers, Mark Visokay | 2008-12-30 |
| 7449385 | Gate dielectric and method | Antonio Rotondaro, Douglas E. Mercer | 2008-11-11 |
| 7423326 | Integrated circuits with composite gate dielectric | Antonio Rotondaro, Malcolm J. Bevan | 2008-09-09 |
| 7387956 | Refractory metal-based electrodes for work function setting in semiconductor devices | James Joseph Chambers, Mark Visokay | 2008-06-17 |
| 7361599 | Integrated circuit and method | Theodore S. Moise, Guoqiang Xing, Mark Visokay, Justin Gaynor, Stephen Roy Gilbert +2 more | 2008-04-22 |
| 7351626 | Method for controlling defects in gate dielectrics | James Joseph Chambers, Mark Visokay, Antonio Luis Pacheco Rotondaro | 2008-04-01 |
| 7351632 | Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS silicon oxynitride dielectric formation using direct nitridation of silicon | Mark Visokay, James Joseph Chambers | 2008-04-01 |
| 7338865 | Method for manufacturing dual work function gate electrodes through local thickness-limited silicidation | Robert William Murto, Mark Visokay | 2008-03-04 |
| 7321154 | Refractory metal-based electrodes for work function setting in semiconductor devices | James Joseph Chambers, Mark Visokay | 2008-01-22 |
| 7291890 | Gate dielectric and method | Mark Visokay, Antonio Rotondaro | 2007-11-06 |