Issued Patents All Time
Showing 51–75 of 104 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7018888 | Method for manufacturing improved sidewall structures for use in semiconductor devices | Brian E. Goodlin, Shirin Siddiqui, Jong Shik Yoon | 2006-03-28 |
| 6987039 | Forming lateral bipolar junction transistor in CMOS flow | — | 2006-01-17 |
| 6873008 | Asymmetrical devices for short gate length performance with disposable sidewall | Theodore W. Houston | 2005-03-29 |
| 6869840 | Compensated-well electrostatic discharge protection devices | Keith E. Kunz | 2005-03-22 |
| 6858486 | Vertical bipolar transistor formed using CMOS processes | — | 2005-02-22 |
| 6794730 | High performance PNP bipolar device fully compatible with CMOS process | Youngmin Kim, Shaoping Tang, Seetharaman Sridhar | 2004-09-21 |
| 6791383 | Reduced gate leakage current in thin gate dielectric CMOS integrated circuits | — | 2004-09-14 |
| 6767810 | Method to increase substrate potential in MOS transistors used in ESD protection circuits | Craig T. Salling, Youngmin Kim | 2004-07-27 |
| 6753559 | Transistor having improved gate structure | Wei William Lee, Greg Hames, Qizhi He, Maureen A. Hanratty, Iqbal Ali | 2004-06-22 |
| 6730555 | Transistors having selectively doped channel regions | Youngmin Kim | 2004-05-04 |
| 6713334 | Fabricating dual voltage CMOSFETs using additional implant into core at high voltage mask | Mahalingam Nandakumar, Youngmin Kim | 2004-03-30 |
| 6682980 | Fabrication of abrupt ultra-shallow junctions using angled PAI and fluorine implant | P.R. Chidambaram, Srinivasan Chakravarthi | 2004-01-27 |
| 6649983 | Vertical bipolar transistor formed using CMOS processes | — | 2003-11-18 |
| 6646311 | Vertical bipolar transistor formed using CMOS processes | — | 2003-11-11 |
| 6639284 | Compensated-well electrostatic discharge protection structure | Keith E. Kunz | 2003-10-28 |
| 6598214 | Design method and system for providing transistors with varying active region lengths | Sreedhar Natarajan | 2003-07-22 |
| 6548359 | Asymmetrical devices for short gate length performance with disposable sidewall | Theodore W. Houston | 2003-04-15 |
| 6514810 | Buried channel PMOS transistor in dual gate CMOS with reduced masking steps | Youngmin Kim | 2003-02-04 |
| 6482724 | Integrated circuit asymmetric transistors | — | 2002-11-19 |
| 6479339 | Use of a thin nitride spacer in a split gate embedded analog process | Mahalingam Nandakumar | 2002-11-12 |
| 6436746 | Transistor having an improved gate structure and method of construction | Wei William Lee, Greg Hames, Qizhi He, Maureen A. Hanratty, Iqbal Ali | 2002-08-20 |
| 6420236 | Hydrogen treatment for threshold voltage shift of metal gate MOSFET devices | Jerry Hu, Hong-Seon Yang, Ih-Chin Chen | 2002-07-16 |
| 6413824 | METHOD TO PARTIALLY OR COMPLETELY SUPPRESS POCKET IMPLANT IN SELECTIVE CIRCUIT ELEMENTS WITH NO ADDITIONAL MASK IN A CMOS FLOW WHERE SEPARATE MASKING STEPS ARE USED FOR THE DRAIN EXTENSION IMPLANTS FOR THE LOW VOLTAGE AND HIGH VOLTAGE TRANSISTORS | Alec J. Morton, Mark S. Rodder, Taylor R. Efland, Chin-Yu Tsai, James R. Hellums | 2002-07-02 |
| 6352900 | Controlled oxide growth over polysilicon gates for improved transistor characteristics | Manoj Mehrotra, Jerry Hu, Mark S. Rodder | 2002-03-05 |
| 6313010 | Integrated circuit insulator and method | Somnath Nag, Ih-Chin Chen | 2001-11-06 |