Issued Patents All Time
Showing 26–50 of 72 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8558310 | Indium, carbon and halogen doping for PMOS transistors | Mahalingam Nandakumar | 2013-10-15 |
| 8372750 | Method and system for improved nickel silicide | Peijun Chen, Jorge A. Kittl | 2013-02-12 |
| 8252609 | Curvature reduction for semiconductor wafers | Brian K. Kirkpatrick, Steven Lee Prins | 2012-08-28 |
| 8253205 | Method for forming strained channel PMOS devices and integrated circuits therefrom | — | 2012-08-28 |
| 8216945 | Wafer planarity control between pattern levels | Steven Lee Prins, Brian K. Kirkpatrick | 2012-07-10 |
| 8124511 | Method of manufacturing a semiconductor device having reduced N/P or P/N junction crystal disorder | — | 2012-02-28 |
| 8125035 | CMOS fabrication process | Mahalingam Nandakumar, Song Zhao | 2012-02-28 |
| 8026135 | Formation of shallow junctions by diffusion from a dielectric doped by cluster or molecular ion beams | — | 2011-09-27 |
| 7932139 | Methodology of improving the manufacturability of laser anneal | Haowen Bu | 2011-04-26 |
| 7902032 | Method for forming strained channel PMOS devices and integrated circuits therefrom | — | 2011-03-08 |
| 7883573 | Method for preparing a source material for ion implantation | — | 2011-02-08 |
| 7825025 | Method and system for improved nickel silicide | Peijun Chen, Jorge A. Kittl | 2010-11-02 |
| 7795122 | Antimony ion implantation for semiconductor components | Haowen Bu, Srinivasan Chakravarthi, Shashank S. Ekbote | 2010-09-14 |
| 7691714 | Semiconductor device having a dislocation loop located within a boundary created by source/drain regions and a method of manufacture therefor | Antonio Luis Pacheco Rotondaro, Kaiping Liu, Jihong Chen | 2010-04-06 |
| 7678637 | CMOS fabrication process | Mahalingam Nandakumar, Song Zhao | 2010-03-16 |
| 7670917 | Semiconductor device made by using a laser anneal to incorporate stress into a channel region | Manoj Mehrotra | 2010-03-02 |
| 7666748 | Method of forming amorphous source/drain extensions | — | 2010-02-23 |
| 7615458 | Activation of CMOS source/drain extensions by ultra-high temperature anneals | Manoj Mehrotra | 2009-11-10 |
| 7557021 | Highly doped gate electrode made by rapidly melting and resolidifying the gate electrode | — | 2009-07-07 |
| 7557022 | Implantation of carbon and/or fluorine in NMOS fabrication | Mahalingam Nandakumar, Lahir Shaik Adam | 2009-07-07 |
| 7511350 | Nickel alloy silicide including indium and a method of manufacture therefor | Peijun Chen, Duofeng Yue, Sue Crank, Thomas D. Bonifield, Homi Mogul | 2009-03-31 |
| 7494905 | Method for preparing a source material including forming a paste for ion implantation | — | 2009-02-24 |
| 7479668 | Source/drain extension implant process for use with short time anneals | Gordon P. Pollack | 2009-01-20 |
| 7371648 | Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same | Jihong Chen, Srinivasan Chakravarthi, Eddie Hearl Breashears | 2008-05-13 |
| 7355255 | Nickel silicide including indium and a method of manufacture therefor | Peijun Chen, Duofeng Yue, Sue Crank, Thomas D. Bonifield, Homi Mogul | 2008-04-08 |