PC

Pei-Hung Chen

TSMC: 14 patents #2,167 of 12,232Top 20%
Google: 1 patents #14,769 of 22,993Top 65%
📍 Baoshan, CA: #18 of 69 inventorsTop 30%
Overall (All Time): #293,045 of 4,157,543Top 8%
16
Patents All Time

Issued Patents All Time

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
D956488 Core for food products mold 2022-07-05
10671909 Decreasing neural network inference times using softmax approximation Yang Li, Sanjiv Kumar, Si Si, Cho-Jui Hsieh 2020-06-02
9728533 Aqueous cleaning techniques and compositions for use in semiconductor device manufacture Chun-Li Chou, Shao-Yen Ku, Jui-Ping Chuang 2017-08-08
8916429 Aqueous cleaning techniques and compositions for use in semiconductor device manufacturing Chun-Li Chou, Shao-Yen Ku, Jui-Ping Chuang 2014-12-23
7259850 Approach to improve ellipsometer modeling accuracy for solving material optical constants N & K Chih-Ming Ke, Shinn-Sheng Yu 2007-08-21
6642150 Method for testing for blind hole formed in wafer layer Chuan-Chieh Huang, Wen-Hsiang Tang, Ming-Shuo Yen, Chiang-Jen Peng 2003-11-04
6350390 Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control Chi Kang Liu, Chang-Jen Shieh 2002-02-26
6267121 Process to season and determine condition of a high density plasma etcher Cheng-Hao Huang, Ming-Shuo Yen, Shih-Fang Chen, Wen-Hsiang Tang 2001-07-31
6214739 Method of metal etching with in-situ plasma cleaning Cheng-Hao Huang, Wen-Hsiang Tang 2001-04-10
6159660 Opposite focus control to avoid keyholes inside a passivation layer Hsin Chen, An-Min Chiang 2000-12-12
6020241 Post metal code engineering for a ROM Jyh-Cheng You, Shau-Tsung Yu, Yi-Jing Chu 2000-02-01
5962345 Method to reduce contact resistance by means of in-situ ICP Ming-Shuo Yen, Horng-Wen Chen 1999-10-05
5811343 Oxidation method for removing fluorine gas inside polysilicon during semiconductor manufacturing to prevent delamination of subsequent layer induced by fluorine outgassing dielectric Yeh-Jye Wann, An-Min Chiang, Shaun Yu 1998-09-22
5753548 Method for preventing fluorine outgassing-induced interlevel dielectric delamination on P-channel FETS Shau-Tsung Yu, An-Min Chiang, Yeh-Jye Wann 1998-05-19
5707896 Method for preventing delamination of interlevel dielectric layer over FET P.sup.+ doped polysilicon gate electrodes on semiconductor integrated circuits An-Min Chiang, Shau-Tsung Yu, Yeh-Jye Wann 1998-01-13
5658821 Method of improving uniformity of metal-to-poly capacitors composed by polysilicon oxide and avoiding device damage Hsin Chen, Sue-Mei Ku, Chih-Shih Wei 1997-08-19