Issued Patents All Time
Showing 51–70 of 70 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6884659 | Thin interface layer to improve copper etch stop | Bi-Trong Chen, Syun-Ming Jang, Shu E Ku, Tien-I Bao, Lih-Ping Li | 2005-04-26 |
| 6878621 | Method of fabricating barrierless and embedded copper damascene interconnects | Zhen-Cheng Wu, Yung-Chen Lu, Syun-Ming Jang | 2005-04-12 |
| 6812135 | Adhesion enhancement between CVD dielectric and spin-on low-k silicate films | Shen-Nan Lee | 2004-11-02 |
| 6812167 | Method for improving adhesion between dielectric material layers | Yu-Huei Chen | 2004-11-02 |
| 6806185 | Method for forming low dielectric constant damascene structure while employing a carbon doped silicon oxide capping layer | Chung-Chi Ko | 2004-10-19 |
| 6794295 | Method to improve stability and reliability of CVD low K dielectric | Cheng-Chung Lin | 2004-09-21 |
| 6759342 | Method of avoiding dielectric arcing | Chih-Hsiang Yao, Bi-Troug Chen, Syun-Ming Jan | 2004-07-06 |
| 6756321 | Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant | Chung-Chi Ko, Yung-Cheng Lu, Lih-Ping Li, Yu-Huei Chen, Shu E Ku | 2004-06-29 |
| 6753260 | Composite etching stop in semiconductor process integration | Tien-I Bao, Shwang-Ming Jeng, Syun-Ming Jang, Jun-Lung Huang, Jeng-Cheng Liu | 2004-06-22 |
| 6657284 | Graded dielectric layer and method for fabrication thereof | Shwang-Ming Jeng, Syun-Ming Jang, Chen-Hua Yu | 2003-12-02 |
| 6654109 | System for detecting surface defects in semiconductor wafers | Chung-Chi Ko, Syun-Ming Jang | 2003-11-25 |
| 6645864 | Physical vapor deposition of an amorphous silicon liner to eliminate resist poisoning | Cheng-Chung Lin | 2003-11-11 |
| 6623654 | Thin interface layer to improve copper etch stop | Bi-Trong Chen, Syun-Ming Jang, Shu E Ku, Tien-I Bao, Lih-Ping Li | 2003-09-23 |
| 6620745 | Method for forming a blocking layer | Syan-Mang Jang, Tien-I Bao, Shwang-Ming Jeng | 2003-09-16 |
| 6602779 | Method for forming low dielectric constant damascene structure while employing carbon doped silicon oxide planarizing stop layer | Yung-Cheng Lu, Chung-Chi Ko | 2003-08-05 |
| 6483173 | Solution to black diamond film delamination problem | Shwangming Jeng, Syun-Ming Jang | 2002-11-19 |
| 6407013 | Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive properties | Tien-I Bao, Cheng-Chung Lin, Syun-Ming Jang | 2002-06-18 |
| 6372661 | Method to improve the crack resistance of CVD low-k dielectric constant material | Cheng-Chung Lin, Shwang-Ming Jeng | 2002-04-16 |
| 6358839 | Solution to black diamond film delamination problem | Shwangming Jeng, Syun-Ming Jang | 2002-03-19 |
| 6319809 | Method to reduce via poison in low-k Cu dual damascene by UV-treatment | Weng Chang, Shwang-Ming Jeng, Syun-Ming Jang | 2001-11-20 |