| 12254218 |
Read schemes with adjustment for neighboring word line sanitization |
Md Raquibuzzaman, Sujjatul Islam |
2025-03-18 |
|
| 12154625 |
Variable programming clocks during a multi- stage programming operation in a NAND memory device |
Sujjatul Islam |
2024-11-26 |
|
| 12099728 |
Non-volatile memory with programmable resistance non-data word line |
Towhidur Razzak, Abu Naser Zainuddin, Jiahui Yuan |
2024-09-24 |
|
| 12046306 |
Temperature dependent programming techniques in a memory device |
Sujjatul Islam |
2024-07-23 |
|
| 12027218 |
Location dependent sense time offset parameter for improvement to the threshold voltage distribution margin in non-volatile memory structures |
Xue Bai Pitner, Prafful Golani |
2024-07-02 |
|
| 11972814 |
Verify techniques for current reduction in a memory device |
Xue Bai Pitner, Yu-Chung Lien, Jiahui Yuan, Bo Lei, Zhenni Wan |
2024-04-30 |
|
| 11972809 |
Selective inhibit bitline voltage to cells with worse program disturb |
Sujjatul Islam, Yu-Chung Lien, Xue Bai Pitner |
2024-04-30 |
|
| 11699494 |
Peak and average ICC reduction by tier-based sensing during program verify operations of non-volatile memory structures |
Xue Bai Pitner, Yu-Chung Lien, Deepanshu Dutta, Huai-Yuan Tseng |
2023-07-11 |
|
| 11636039 |
Mapping for multi-state programming of memory devices |
Bernie Rub, Mostafa El Gamal, Niranjay Ravindran, Richard David Barndt, Henry Chin +1 more |
2023-04-25 |
$22,824,000 |
| 11574693 |
Memory apparatus and method of operation using periodic normal erase dummy cycle to improve stripe erase endurance and data retention |
Chin-Yi Chen, Muhammad Masuduzzaman, Dengtao Zhao, Anubhav Khandelwal |
2023-02-07 |
|
| 11568943 |
Memory apparatus and method of operation using zero pulse smart verify |
Xue Bai Pitner, Dengtao Zhao, Deepanshu Dutta |
2023-01-31 |
|
| 11557358 |
Memory apparatus and method of operation using adaptive erase time compensation for segmented erase |
Dengtao Zhao, Deepanshu Dutta |
2023-01-17 |
|
| 11508440 |
Periodic write to improve data retention |
Dengtao Zhao, Chin-Yi Chen, Ryohei Shoji |
2022-11-22 |
|
| 11475967 |
Modified verify in a memory device |
Xue Bai Pitner, Muhammad Masuduzzaman |
2022-10-18 |
|
| 11475961 |
Nonvolatile memory with efficient look-ahead read |
Sujjatul Islam, Deepanshu Dutta |
2022-10-18 |
|
| 11417393 |
Two-stage programming using variable step voltage (DVPGM) for non-volatile memory structures |
Sujjatul Islam, Muhammad Masuduzzaman |
2022-08-16 |
|
| 11409443 |
Intelligent memory wear leveling |
Deepanshu Dutta, Niles Yang, Mark Shlick |
2022-08-09 |
$13,298,000 |
| 11404127 |
Read refresh to improve power on data retention for a non-volatile memory |
Deepanshu Dutta, Vishwanath Basavaegowda Shanthakumar |
2022-08-02 |
|
| 11398280 |
Lockout mode for reverse order read operation |
Yu-Chung Lien, Deepanshu Dutta, Huai-Yuan Tseng |
2022-07-26 |
|
| 11372765 |
Mapping for multi-state programming of memory devices |
Bernie Rub, Mostafa El Gamal, Niranjay Ravindran, Richard David Barndt, Henry Chin +1 more |
2022-06-28 |
$10,229,000 |
| 11361834 |
Systems and methods for dual-pulse programming |
Deepanshu Dutta |
2022-06-14 |
|
| 11342035 |
Memory apparatus and method of operation using one pulse smart verify |
Xue Bai Pitner, Deepanshu Dutta |
2022-05-24 |
|
| 11302409 |
Programming techniques including an all string verify mode for single-level cells of a memory device |
Xue Bai Pitner, Deepanshu Dutta, Huai-Yuan Tseng, Cynthia Hsu |
2022-04-12 |
|
| 11177002 |
Programming memory cells using encoded TLC-fine |
Xue Bai Pitner, Deepanshu Dutta |
2021-11-16 |
|
| 10990311 |
Multi-stream non-volatile storage system |
Vishwas Saxena, Abhijit Rao, Saifullah Nalatwad |
2021-04-27 |
$14,346,000 |
