Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Location dependent sense time offset parameter for improvement to the threshold voltage distribution margin in non-volatile memory structures

Location dependent sense time offset parameter for improvement to the threshold voltage distribution margin in non-volatile memory structures

US Patent 12027218 · Granted Jul 2, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Programming techniques to improve erase state upper tails in a memory device2025
Read schemes with adjustment for neighboring word line sanitization2025
Variable programming clocks during a multi- stage programming operation in a NAN2024
Non-volatile memory with programmable resistance non-data word line2024
Temperature dependent programming techniques in a memory device2024
Program voltage dependent program source levels2024
Selective inhibit bitline voltage to cells with worse program disturb2024
Selective inhibit bitline voltage to cells with worse program disturb2024
Verify techniques for current reduction in a memory device2024
Verify techniques for current reduction in a memory device2024
EP cycling dependent asymmetric/symmetric VPASS conversion in non-volatile memor2024
Three-dimensional memory device including discrete charge storage elements and m2023