Issued Patents All Time
Showing 76–100 of 235 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9595662 | MRAM integration techniques for technology scaling | Xia Li, Yu Lu | 2017-03-14 |
| 9589619 | Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy | Kangho Lee, Jimmy Jianan Kan | 2017-03-07 |
| 9590010 | Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer | Matthias Georg Gottwald, Jimmy Jianan Kan, Chando Park, Xiaochun Zhu | 2017-03-07 |
| 9583696 | Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction | Matthias Georg Gottwald, Chando Park, Xiaochun Zhu, Kangho Lee | 2017-02-28 |
| 9548446 | Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ) | Chando Park, Matthias Georg Gottwald, Kangho Lee | 2017-01-17 |
| 9548445 | Amorphous alloy space for perpendicular MTJs | Kangho Lee, Wei-Chuan Chen | 2017-01-17 |
| 9548333 | MRAM integration with low-K inter-metal dielectric for reduced parasitic capacitance | Yu Lu, Xia Li | 2017-01-17 |
| 9543036 | System and method of programming a memory cell | Xia Li, Xiaochun Zhu | 2017-01-10 |
| 9524765 | Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion | Yu Lu | 2016-12-20 |
| 9508439 | Non-volatile multiple time programmable memory device | Xia Li, Jeffrey Junhao Xu, Xiao Lu, Matthew Michael Nowak, Xiaonan Chen +2 more | 2016-11-29 |
| 9502469 | Electrically reconfigurable interposer with built-in resistive memory | Yu Lu, Vidhya Ramachandran | 2016-11-22 |
| 9502088 | Constant sensing current for reading resistive memory | Seong-Ook Jung, Sara Choi, Jisu Kim, Taehui Na, Jung Pill Kim | 2016-11-22 |
| 9502091 | Sensing circuit for resistive memory cells | Seong-Ook Jung, Taehui Na, Byung Kyu Song, Jung Pill Kim | 2016-11-22 |
| 9496314 | Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area | Yu Lu, Xiaochun Zhu, Xia Li | 2016-11-15 |
| 9461094 | Switching film structure for magnetic random access memory (MRAM) cell | Xia Li, Wei-Chuan Chen, Yu Lu, Kangho Lee | 2016-10-04 |
| 9455014 | Adjusting resistive memory write driver strength based on write error rate (WER) to improve WER yield, and related methods and systems | Kangho Lee, Taehyun Kim, Sungryul Kim, Jung Pill Kim | 2016-09-27 |
| 9444035 | Magnesium oxide capping with a shorted path for perpendicular magnetic tunnel junction devices and method for fabrication | Chando Park, Kangho Lee, Jimmy Jianan Kan, Matthias Georg Gottwald, Xiaochun Zhu | 2016-09-13 |
| 9406875 | MRAM integration techniques for technology scaling | Xia Li, Yu Lu | 2016-08-02 |
| 9406689 | Logic finFET high-K/conductive gate embedded multiple time programmable flash memory | Xia Li, Bin Yang | 2016-08-02 |
| 9406354 | System, apparatus, and method for an offset cancelling single ended sensing circuit | Seong-Ook Jung, Taehui Na, Jisu Kim, Jung Pill Kim | 2016-08-02 |
| 9390779 | System and method of sensing a memory cell | Seong-Ook Jung, Taehui Na, Jisu Kim, Jung Pill Kim | 2016-07-12 |
| 9385309 | Smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials | Matthias Georg Gottwald, Jimmy Jianan Kan, Kangho Lee, Chando Park | 2016-07-05 |
| 9385305 | STT-MRAM design enhanced by switching current induced magnetic field | William Xia, Wenqing Wu, Kendrick Hoy Leong Yuen, Abhishek Banerjee, Xia Li +1 more | 2016-07-05 |
| 9384810 | Monolithic multi-channel adaptable STT-MRAM | Xiaochun Zhu | 2016-07-05 |
| 9379314 | Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) | Chando Park, Kangho Lee | 2016-06-28 |