SK

Seung H. Kang

QU Qualcomm: 233 patents #96 of 12,104Top 1%
IF Industry-Academic Cooperation Foundation: 2 patents #2 of 106Top 2%
QI Qulacomm Incorporated: 1 patents #1 of 24Top 5%
📍 San Diego, CA: #96 of 23,606 inventorsTop 1%
🗺 California: #397 of 386,348 inventorsTop 1%
Overall (All Time): #2,326 of 4,157,543Top 1%
235
Patents All Time

Issued Patents All Time

Showing 101–125 of 235 patents

Patent #TitleCo-InventorsDate
9379314 Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) Chando Park, Kangho Lee 2016-06-28
9372750 Method and apparatus for non-volatile RAM error re-mapping Dexter Tamio Chun, Jung Pill Kim, Taehyun Kim 2016-06-21
9373782 MTJ structure and integration scheme Xia Li, Matthew Michael Nowak 2016-06-21
9368232 Magnetic automatic test equipment (ATE) memory tester device and method employing temperature control Kangho Lee, Wah Nam Hsu, Xiao Lu 2016-06-14
9368715 Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) Kangho Lee, Xiaochun Zhu 2016-06-14
9368716 Magnetic tunnel junction (MTJ) storage element and spin transfer torque magnetoresistive random access memory (STT-MRAM) cells having an MTJ Shiqun Gu, Xiaochun Zhu 2016-06-14
9343135 Physically unclonable function based on programming voltage of magnetoresistive random-access memory Xiaochun Zhu, Steven M. Millendorf, Xu Guo, David M. Jacobson, Kangho Lee +1 more 2016-05-17
9343659 Embedded magnetoresistive random access memory (MRAM) integration with top contacts Yu Lu, Wei-Chuan Chen 2016-05-17
9324768 System and method of shared bit line MRAM Xiaochun Zhu, Xia Li 2016-04-26
9324939 Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (p-MTJ) Chando Park, Matthias Georg Gottwald, Kangho Lee 2016-04-26
9318696 Self-aligned top contact for MRAM fabrication Yu Lu, Xia Li, Shiqun Gu 2016-04-19
9298946 Physically unclonable function based on breakdown voltage of metal-insulator-metal device Xiaochun Zhu, Steven M. Millendorf, Xu Guo, David M. Jacobson, Kangho Lee +1 more 2016-03-29
9281039 System and method to provide a reference cell using magnetic tunnel junction cells Seong-Ook Jung, Taehui Na, Jisu Kim, Jung Pill Kim 2016-03-08
9245610 OTP cell with reversed MTJ connection Jung Pill Kim, Taehyun Kim, Kangho Lee, Xia Li, Wah Nam Hsu 2016-01-26
9245608 Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device Wei-Chuan Chen, Kangho Lee, Xiaochun Zhu 2016-01-26
9244853 Tunable multi-tiered STT-MRAM cache for multi-core processors Xiaochun Zhu, Xiaoxia Wu 2016-01-26
9230630 Physically unclonable function based on the initial logical state of magnetoresistive random-access memory Xiaochun Zhu, Steven M. Millendorf, Xu Guo, David M. Jacobson, Kangho Lee +1 more 2016-01-05
9224467 Resistance-based memory having two-diode access device Wuyang Hao, Jungwon Suh, Kangho Lee, Taehyun Kim, Jung Pill Kim 2015-12-29
9214624 Amorphous spacerlattice spacer for perpendicular MTJs Kangho Lee, Wei-Chuan Chen 2015-12-15
9214214 Physically unclonable function based on the random logical state of magnetoresistive random-access memory Xiaochun Zhu, Steven M. Millendorf, Xu Guo, David M. Jacobson, Kangho Lee +1 more 2015-12-15
9203013 Magnetic tunnel junction device and fabrication Xia Li, Xiaochun Zhu 2015-12-01
9196337 Low sensing current non-volatile flip-flop Seong-Ook Jung, Youngdon Jung, Kyungho Ryu, Jisu Kim, Jung Pill Kim 2015-11-24
9196334 Hierarchical memory magnetoresistive random-access memory (MRAM) architecture Xiaochun Zhu 2015-11-24
9190201 Magnetic film enhanced inductor Xia Li, Matthew Michael Nowak, Brian Matthew Henderson 2015-11-17
9189201 Entropy source with magneto-resistive element for random number generator David M. Jacobson, Xiaochun Zhu, Wenqing Wu, Kendrick Hoy Leong Yuen 2015-11-17