Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12375084 | Spin-charge conversion based spin logic device | Jongill Hong, Saeroonter Oh | 2025-07-29 |
| 11475948 | Memory device and operating method of memory device | Jongryul Kim, Jinyoung Kim | 2022-10-18 |
| 11127457 | Memory device with reduced read disturbance and method of operating the memory device | Jongryul Kim, Dueung Kim, Jongmin Baek | 2021-09-21 |
| 11100990 | Memory device for avoiding multi-turn on of memory cell during reading, and operating method thereof | Ji Hoon Lim, Jongryul Kim, Venkataramana Gangasani | 2021-08-24 |
| 11100959 | Variable resistance memory device | Kyu-Rie Sim | 2021-08-24 |
| 11011228 | Memory device having an increased sensing margin | Yongsung Cho, Junho Shin, Makoto Hirano | 2021-05-18 |
| 10998038 | Memory device and method of operating the same | Jongryul Kim, Dueung Kim, Jongmin Baek | 2021-05-04 |
| 10263645 | Error correction and decoding | Seong-Ook Jung, Sara Choi, Byung Kyu Song, Jisu Kim, Jung Pill Kim +3 more | 2019-04-16 |
| 9852783 | Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages | Byung Kyu Song, Seong-Ook Jung, Jung Pill Kim, Seung H. Kang | 2017-12-26 |
| 9800271 | Error correction and decoding | Seong-Ook Jung, Sara Choi, Byung Kyu Song, Jisu Kim, Jung Pill Kim +3 more | 2017-10-24 |
| 9728259 | Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin | Seong-Ook Jung, Byung Kyu Song, Jung Pill Kim, Seung H. Kang | 2017-08-08 |
| 9691462 | Latch offset cancelation for magnetoresistive random access memory | Seong-Ook Jung, Byungkyu Song, Jung Pill Kim, Seung H. Kang | 2017-06-27 |
| 9666259 | Dual mode sensing scheme | Seong-Ook Jung, Byung Kyu Song, Jung Pill Kim, Seung H. Kang | 2017-05-30 |
| 9502091 | Sensing circuit for resistive memory cells | Seong-Ook Jung, Byung Kyu Song, Jung Pill Kim, Seung H. Kang | 2016-11-22 |
| 9502088 | Constant sensing current for reading resistive memory | Seong-Ook Jung, Sara Choi, Jisu Kim, Jung Pill Kim, Seung H. Kang | 2016-11-22 |
| 9406354 | System, apparatus, and method for an offset cancelling single ended sensing circuit | Seong-Ook Jung, Jisu Kim, Jung Pill Kim, Seung H. Kang | 2016-08-02 |
| 9390779 | System and method of sensing a memory cell | Seong-Ook Jung, Jisu Kim, Seung H. Kang, Jung Pill Kim | 2016-07-12 |
| 9378781 | System, apparatus, and method for sense amplifiers | Seong-Ook Jung, Jisu Kim, Jung Pill Kim, Seung H. Kang | 2016-06-28 |
| 9281039 | System and method to provide a reference cell using magnetic tunnel junction cells | Seong-Ook Jung, Jisu Kim, Jung Pill Kim, Seung H. Kang | 2016-03-08 |
| 9165630 | Offset canceling dual stage sensing circuit | Seong-Ook Jung, Jisu Kim, Jung Pill Kim, Seung H. Kang | 2015-10-20 |
| 9111623 | NMOS-offset canceling current-latched sense amplifier | Seong-Ook Jung, Ji Su Kim, Jung Pill Kim, Seung H. Kang | 2015-08-18 |