Issued Patents All Time
Showing 126–150 of 235 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9164729 | Method and apparatus for generating random numbers using a physical entropy source | Wenqing Wu, Peiyuan Wang, Raghu Sagar Madala, Senthil Govindaswamy, Kendrick Hoy Leong Yuen +2 more | 2015-10-20 |
| 9165630 | Offset canceling dual stage sensing circuit | Seong-Ook Jung, Taehui Na, Jisu Kim, Jung Pill Kim | 2015-10-20 |
| 9159910 | One-mask MTJ integration for STT MRAM | David Bang, Kangho Lee | 2015-10-13 |
| 9142762 | Magnetic tunnel junction and method for fabricating a magnetic tunnel junction | Xia Li, Kangho Lee, Wei-Chuan Chen, Yu Lu, Chando Park | 2015-09-22 |
| 9142278 | Asymmetric write scheme for magnetic bit cell elements | Xiaochun Zhu, Hari M. Rao, Jung Pill Kim | 2015-09-22 |
| 9135976 | Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements | Wenqing Wu, Kendrick Hoy Leong Yuen, Xiaochun Zhu, Matthew Michael Nowak, Jeffrey A. Levin +2 more | 2015-09-15 |
| 9136463 | Method of forming a magnetic tunnel junction structure | Xia Li, Xiaochun Zhu | 2015-09-15 |
| 9110746 | Magnetic tunnel junction based random number generator | Xiaochun Zhu, Wenqing Wu, David M. Jacobson, Kendrick Hoy Leong Yuen | 2015-08-18 |
| 9111623 | NMOS-offset canceling current-latched sense amplifier | Seong-Ook Jung, Taehui Na, Ji Su Kim, Jung Pill Kim | 2015-08-18 |
| 9105310 | System and method of programming a memory cell | Xia Li, Xiaochun Zhu | 2015-08-11 |
| 9105340 | Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) | Kangho Lee, Xiachun Zhu | 2015-08-11 |
| 9093149 | Low cost programmable multi-state device | Xia Li | 2015-07-28 |
| 9082962 | Magnetic Tunnel Junction (MTJ) on planarized electrode | Xia Li, Wei-Chuan Chen, Kangho Lee, Xiaochun Zhu, Wah Nam Hsu | 2015-07-14 |
| 9070870 | Method of fabricating a magnetic tunnel junction (MTJ) device with reduced switching current | Xiaochun Zhu, Xia Li, Wei-Chuan Chen | 2015-06-30 |
| 9064589 | Three port MTJ structure and integration | Xia Li, Xiaochun Zhu, Jung Pill Kim, Wah Nam Hsu, Taehyun Kim +1 more | 2015-06-23 |
| 9047964 | Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness | Kangho Lee, Taehyun Kim, Jung Pill Kim | 2015-06-02 |
| 9043740 | Fabrication of a magnetic tunnel junction device | Kangho Lee, Xiaochun Zhu, Xia Li | 2015-05-26 |
| 9041131 | Magnetic tunnel junction device and fabrication | Xia Li | 2015-05-26 |
| 9014749 | System and method to initiate a housekeeping operation at a mobile device | Thomas R. Toms, Hari M. Rao, Jung Pill Kim, Jungwon Suh | 2015-04-21 |
| 8981502 | Fabricating a magnetic tunnel junction storage element | Wei-Chuan Chen | 2015-03-17 |
| 8969984 | Magnetic tunnel junction device | Xiaochun Zhu, Xia Li, Kangho Lee | 2015-03-03 |
| 8929167 | MRAM self-repair with BIST logic | Jung Pill Kim, Taehyun Kim, Xia Li | 2015-01-06 |
| 8923044 | MTP MTJ device | Xia Li, Kangho Lee, Jung Pill Kim, Taehyun Kim, Wah Nam Hsu +3 more | 2014-12-30 |
| 8913423 | Reducing source loading effect in spin torque transfer magnetoresistive random access memory (STT-MRAM) | Kangho Lee, Xiaochun Zhu | 2014-12-16 |
| 8912012 | Magnetic tunnel junction device and fabrication | Xia Li, Xiaochun Zhu | 2014-12-16 |