Issued Patents All Time
Showing 26–50 of 235 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10381060 | High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array | Jimmy Jianan Kan, Chando Park, Peiyuan Wang, Sungryul Kim | 2019-08-13 |
| 10347821 | Electrode structure for resistive memory device | Yu Lu, Junjing Bao, Xia Li | 2019-07-09 |
| 10340395 | Semiconductor variable capacitor using threshold implant region | Xia Li, Fabio Alessio Marino, Qingqing Liang, Francesco Carobolante | 2019-07-02 |
| 10319425 | Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuits | Seong-Ook Jung, Byungkyu Song, Sungryul Kim, Jung Pill Kim | 2019-06-11 |
| 10311930 | One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations | Sungryul Kim, Chando Park | 2019-06-04 |
| 10312244 | Bi-stable static random access memory (SRAM) bit cells that facilitate direct writing for storage | Xia Li, Bin Yang, Gengming Tao | 2019-06-04 |
| 10290340 | Offset-canceling (OC) write operation sensing circuits for sensing switching in a magneto-resistive random access memory (MRAM) bit cell in an MRAM for a write operation | Seong-Ook Jung, Sara Choi, Hong Keun Ahn, Sungryul Kim | 2019-05-14 |
| 10263645 | Error correction and decoding | Seong-Ook Jung, Sara Choi, Byung Kyu Song, Taehui Na, Jisu Kim +3 more | 2019-04-16 |
| 10249814 | Dynamic memory protection | Chando Park, Sungryul Kim, Wei-Chuan Chen | 2019-04-02 |
| 10224368 | Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path | Xia Li, Jimmy Jianan Kan, Bin Yang, Gengming Tao | 2019-03-05 |
| 10224087 | Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cells | Seong-Ook Jung, Sara Choi, Hong Keun Ahn, Sungryul Kim | 2019-03-05 |
| 10210920 | Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applications | Wei-Chuan Chen, Xia Li, Wah Nam Hsu | 2019-02-19 |
| 10134808 | Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) | Jimmy Jianan Kan, Chando Park, Matthias Georg Gottwald | 2018-11-20 |
| 10109674 | Semiconductor metallization structure | Yu Lu | 2018-10-23 |
| 10103319 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Kangho Lee, Jimmy Jianan Kan, Xiaochun Zhu, Matthias Georg Gottwald, Chando Park | 2018-10-16 |
| 10102898 | Ferroelectric-modulated Schottky non-volatile memory | Xia Li, Jeffrey Junhao Xu | 2018-10-16 |
| 10102895 | Back gate biasing magneto-resistive random access memory (MRAM) bit cells to reduce or avoid write operation failures caused by source degeneration | Xia Li | 2018-10-16 |
| 10096649 | Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices | Chando Park, Jimmy Jianan Kan | 2018-10-09 |
| 10060880 | Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensing | Wei-Chuan Chen, Jung Pill Kim | 2018-08-28 |
| 10043967 | Self-compensation of stray field of perpendicular magnetic elements | Wei-Chuan Chen, Xiaochun Zhu, Xia Li, Yu Lu, Chando Park | 2018-08-07 |
| 9966149 | OTP cell with reversed MTJ connection | Jung Pill Kim, Taehyun Kim, Kangho Lee, Xia Li, Wah Nam Hsu | 2018-05-08 |
| 9935258 | Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device | Wei-Chuan Chen, Kangho Lee, Xiaochun Zhu | 2018-04-03 |
| 9929211 | Reducing spin pumping induced damping of a free layer of a memory device | Xiaochun Zhu, Xia Li | 2018-03-27 |
| 9875784 | Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systems | Xia Li, Bin Yang, Gengming Tao | 2018-01-23 |
| 9870811 | Physically unclonable function based on comparison of MTJ resistances | Peiyuan Wang, Jung Pill Kim, Jimmy Jianan Kan, Chando Park | 2018-01-16 |