CD

Christian Dussarrat

AL American Air Liquide: 41 patents #1 of 326Top 1%
AL Air Liquide Electronics U.S. Lp: 5 patents #7 of 60Top 15%
Applied Materials: 1 patents #4,780 of 7,310Top 70%
TL Tokyo Electron Limited: 1 patents #3,538 of 5,567Top 65%
📍 Yokosuka, DE: #1 of 1 inventorsTop 100%
Overall (All Time): #18,306 of 4,157,543Top 1%
89
Patents All Time

Issued Patents All Time

Showing 76–89 of 89 patents

Patent #TitleCo-InventorsDate
8092721 Deposition of ternary oxide films containing ruthenium and alkali earth metals Satoko Gatineau, Julien Gatineau 2012-01-10
8088938 Low decomposition storage of a tantalum precursor Nathan Stafford, Olivier Letessier, Ravi Laxman 2012-01-03
8076243 Metal precursors for deposition of metal-containing films Clément Lansalot-Matras, Vincent M. Omarjee, Cheng-Fang Hsiao 2011-12-13
8071163 Deposition of Ta- or Nb-doped high-k films 2011-12-06
7972975 Method for forming a dielectric film and novel precursors for implementing said method 2011-07-05
7951711 Metal precursors for semiconductor applications 2011-05-31
7807223 Precursors having open ligands for ruthenium containing films deposition Julien Gatineau 2010-10-05
7544389 Precursor for film formation and method for forming ruthenium-containing film Kazutaka Yanagita, Julien Gatineau 2009-06-09
7482286 Method for forming dielectric or metallic films Ashutosh Misra, Matthew Fisher, Benjamin Jurcik, Eri Tsukada, Jean-Marc Girard 2009-01-27
7351670 Method for producing silicon nitride films and process for fabricating semiconductor devices using said method Takeshi Hoshi, Tsuyoshi Saito, Takako Kimura, Kazutaka Yanagita 2008-04-01
7192626 Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition Jean-Marc Girard, Takako Kimura, Naoki Tamaoki, Yuusuke Sato 2007-03-20
7064083 Hexakis(monohydrocarbylamino)disilanes and method for the preparation thereof Jean-Marc Girard 2006-06-20
7019159 Hexakis(monohydrocarbylamino) disilanes and method for the preparation thereof Jean-Marc Girard 2006-03-28
6936548 Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition Jean-Marc Girard 2005-08-30