Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12341017 | Etching methods with alternating non-plasma and plasma etching processes | Xiangyu Guo | 2025-06-24 |
| 12327731 | Etching gas mixture and method of manufacturing integrated circuit device using the same | Changgil Son, Jinhwan Lee, Hoyoung Jang | 2025-06-10 |
| 12327732 | Method to improve profile control during selective etching of silicon nitride spacers | Xiangyu Guo, James Royer, Venkateswara R. Pallem | 2025-06-10 |
| 12224177 | Method of running an etch process in higher selectivity to mask and polymer regime by using a cyclic etch process | Xiangyu Guo | 2025-02-11 |
| 12188123 | Deposition of iodine-containing carbon films | Phong Nguyen, Fabrizio Marchegiani, Xiangyu Guo | 2025-01-07 |
| 12106971 | High conductive passivation layers and method of forming the same during high aspect ratio plasma etching | Xiangyu Guo, Kayla Diemoz | 2024-10-01 |
| 12106940 | Systems and methods for storage and supply of F3NO-free FNO gases and F3NO-free FNO gas mixtures for semiconductor processes | Ayaka NISHIYAMA, Jiro Yokota, Chih-Yu Hsu, Peng Shen | 2024-10-01 |
| 12083493 | Selective adsorption of halocarbon impurities containing cl, br and i in fluorocarbons or hydrofluorocarbons using adsorbent supported metal oxide | Anup Doraiswamy | 2024-09-10 |
| 11837474 | Method to improve profile control during selective etching of silicon nitride spacers | Xiangyu Guo, James Royer, Venkateswara R. Pallem | 2023-12-05 |
| 11469110 | Method to improve profile control during selective etching of silicon nitride spacers | Xiangyu Guo, James Royer, Venkateswara R. Pallem | 2022-10-11 |
| 11430663 | Iodine-containing compounds for etching semiconductor structures | Vijay Surla, Rahul Gupta, Hui SUN, Venkateswara R. Pallem, Fabrizio Marchegiani +2 more | 2022-08-30 |
| 11152223 | Fluorocarbon molecules for high aspect ratio oxide etch | Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Christian Dussarrat | 2021-10-19 |
| 11024513 | Methods for minimizing sidewall damage during low k etch processes | Chih-Yu Hsu, Peng Shen | 2021-06-01 |
| 10720335 | Chemistries for TSV/MEMS/power device etching | Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee | 2020-07-21 |
| 10629451 | Method to improve profile control during selective etching of silicon nitride spacers | Xiangyu Guo, James Royer, Venkateswara R. Pallem | 2020-04-21 |
| 10607850 | Iodine-containing compounds for etching semiconductor structures | Vijay Surla, Rahul Gupta, Hui SUN, Venkateswara R. Pallem, Fabrizio Marchegiani +2 more | 2020-03-31 |
| 10529581 | SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications | Chih-Yu Hsu, Peng Shen, Takashi TERAMOTO, Jiro Yokota | 2020-01-07 |
| 10410878 | Hydrofluorocarbons containing —NH2 functional group for 3D NAND and DRAM applications | Hui SUN, Fabrizio Marchegiani, James Royer, Rahul Gupta | 2019-09-10 |
| 10381240 | Fluorocarbon molecules for high aspect ratio oxide etch | Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Christian Dussarrat | 2019-08-13 |
| 10347498 | Methods of minimizing plasma-induced sidewall damage during low K etch processes | Chih-Yu Hsu, Peng Shen | 2019-07-09 |
| 10115600 | Method of etching semiconductor structures with etch gas | Rahul Gupta, Venkateswara R. Pallem, Vijay Surla, Curtis Anderson | 2018-10-30 |
| 10103031 | Chemistries for TSV/MEMS/power device etching | Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee | 2018-10-16 |
| 9892932 | Chemistries for TSV/MEMS/power device etching | Peng Shen, Christian Dussarrat, Curtis Anderson, Rahul Gupta, Vincent M. Omarjee | 2018-02-13 |
| 9773679 | Method of etching semiconductor structures with etch gas | Rahul Gupta, Venkateswara R. Pallem, Vijay Surla, Curtis Anderson | 2017-09-26 |
| 9514959 | Fluorocarbon molecules for high aspect ratio oxide etch | Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Christian Dussarrat | 2016-12-06 |