Issued Patents All Time
Showing 1–25 of 178 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12362168 | Solvent annealing of an organic planarization layer | Jing Guo, Indira Seshadri, Luciana Meli-Thompson, Dustin Janes, Jon Fayad +2 more | 2025-07-15 |
| 11942557 | Nanosheet transistor with enhanced bottom isolation | Lan Yu, Andrew M. Greene, Heng Wu | 2024-03-26 |
| 11916143 | Vertical transport field-effect transistor with gate patterning | Ruilong Xie, Indira Seshadri, Jing Guo, Ekmini Anuja De Silva | 2024-02-27 |
| 11908937 | Vertical transport field-effect transistor with ring-shaped wrap-around contact | Xin Miao, Kangguo Cheng, Chen Zhang | 2024-02-20 |
| 11849647 | Nonmetallic liner around a magnetic tunnel junction | Tao Li, Yann Mignot, Ashim Dutta, Tsung-Sheng Kang | 2023-12-19 |
| 11843031 | Short gate on active and longer gate on STI for nanosheets | Chen Zhang, Kangguo Cheng, Ruilong Xie | 2023-12-12 |
| 11798852 | Hybrid-channel nano-sheet FETs | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2023-10-24 |
| 11764259 | Vertical field-effect transistor with dielectric fin extension | Chen Zhang, Tenko Yamashita, Xin Miao, Kangguo Cheng | 2023-09-19 |
| 11735658 | Tunnel field-effect transistor with reduced subthreshold swing | Xin Miao, Chen Zhang, Kangguo Cheng | 2023-08-22 |
| 11728340 | Single diffusion break isolation for gate-all-around field-effect transistor devices | Xin Miao, Chen Zhang, Kangguo Cheng | 2023-08-15 |
| 11705517 | Nanosheet transistors with strained channel regions | Xin Miao, Kangguo Cheng, Chen Zhang | 2023-07-18 |
| 11664422 | Nanosheet transistor with ultra low-k spacer and improved patterning robustness | Kangguo Cheng, Chen Zhang, Xin Miao | 2023-05-30 |
| 11637041 | Method of forming high mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator | Xin Miao, Chen Zhang, Kangguo Cheng | 2023-04-25 |
| 11621348 | Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction | Kangguo Cheng, Chen Zhang, Xin Miao | 2023-04-04 |
| 11575042 | Tunnel field-effect transistor with reduced subthreshold swing | Xin Miao, Chen Zhang, Kangguo Cheng | 2023-02-07 |
| 11575022 | Vertical field-effect transistor late gate recess process with improved inter-layer dielectric protection | Ruilong Xie, Pietro Montanini, Hemanth Jagannathan | 2023-02-07 |
| 11569229 | Stacked vertical transport field effect transistors with anchors | Chen Zhang, Kangguo Cheng, Tenko Yamashita, Fee Li Lie | 2023-01-31 |
| 11515401 | Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance | Chen Zhang, Kangguo Cheng, Xin Miao | 2022-11-29 |
| 11495673 | Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance | Chen Zhang, Kangguo Cheng, Xin Miao | 2022-11-08 |
| 11430864 | VFET device with controllable top spacer | Chen Zhang, Kangguo Cheng, Xin Miao | 2022-08-30 |
| 11276612 | Hybrid-channel nano-sheet FETS | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2022-03-15 |
| 11196001 | 3D ReRAM formed by metal-assisted chemical etching with replacement wordline and wordline separation | Xin Miao, Kangguo Cheng, Chen Zhang | 2021-12-07 |
| 11183389 | Fin field effect transistor devices with self-aligned gates | Stuart A. Sieg, Ruilong Xie, John R. Sporre | 2021-11-23 |
| 11164940 | Method of forming III-V on insulator structure on semiconductor substrate | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-11-02 |
| 11107905 | Vertical field effect transistors with self aligned source/drain junctions | Xin Miao, Chen Zhang, Kangguo Cheng | 2021-08-31 |